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Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文
Applied Physics A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 2, 页码: 108(1-5)
作者:  Li J(李健);  Han XX(韩修训);  Dong C(董琛);  Fan, Changzeng;  Han XX(韩修训)
收藏  |  浏览/下载:17/0  |  提交时间:2018/06/11
Formation energies of substitutional N-As and split interstitial complexes in dilute GaAsN alloys with different growth orientations 期刊论文
2018, 卷号: 124, 期号: 2
作者:  Li, Jian[1,2];  Han, Xiuxun[2];  Dong, Chen[2,3];  Fan, Changzeng[4]
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/30
Electrical characterization of Cu Schottky contacts to n-type GaAsN grown on (311)A/B GaAs substrates 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 657, 页码: 325-329
作者:  Dong C(董琛);  Han XX(韩修训);  Gao, Xin;  Yoshio Ohshita;  Masafumi Yamaguchi
收藏  |  浏览/下载:17/0  |  提交时间:2015/12/30
Impact of the substrate orientation on the N incorporation in GaAsN: Theoretical and experimental investigations 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 687, 页码: 42-46
作者:  Li J(李健);  Han XX(韩修训)
收藏  |  浏览/下载:17/0  |  提交时间:2016/10/25
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 055706(1-4)
作者:  Han XX(韩修训);  Dong C(董琛);  Feng, Qiang;  Ohshita, Yoshio;  Yamaguchi, Masafumi
收藏  |  浏览/下载:30/0  |  提交时间:2015/12/30
Growth orientation dependence of Si doping in GaAsN 期刊论文
Journal of Applied Physics, 2015, 卷号: 117, 期号: 5, 页码: 4
作者:  Han, X. X.;  C. Dong;  Q. Feng;  Y. Ohshita and M. Yamaguchi
收藏  |  浏览/下载:12/0  |  提交时间:2016/07/15
In-plane optical anisotropy in gaasn/gaas single-quantum well investigated by reflectance-difference spectroscopy 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: 5
作者:  Yu, J. L.;  Chen, Y. H.;  Ye, X. L.;  Jiang, C. Y.;  Jia, C. H.
收藏  |  浏览/下载:11/0  |  提交时间:2019/05/12
In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516
Yu JL (Yu J. L.); Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Jiang CY (Jiang C. Y.); Jia CH (Jia C. H.)
收藏  |  浏览/下载:293/18  |  提交时间:2010/08/17
Electron spin quantum beats and room temperature g factor in GaAsN 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4
Zhao, HM; Lombez, L; Liu, BL; Sun, BQ; Xue, QK; Chen, DM; Marie, X
收藏  |  浏览/下载:8/0  |  提交时间:2013/09/17
Band-gap bowing and p-type doping of (zn, mg, be)o wide-gap semiconductor alloys: a first-principles study 期刊论文
European physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444
作者:  Shi, H. -L.;  Duan, Y.
收藏  |  浏览/下载:16/0  |  提交时间:2019/05/12


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