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浏览/检索结果: 共7条，第1-7条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature 期刊论文 EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2013, 卷号: 62, 期号: [db:dc_citation_issue] 作者:  Zhang, Lu;  Wang, Xiaoliang;  Xiao, Hongling;  Chen, Hong;  Feng, Chun 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/03 The influence of the 1st aln and the 2nd gan layers on properties of algan/2nd aln/2nd gan/1st aln/1st gan structure 期刊论文 Applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 The influence of the ingan back-barrier on the properties of al0.3ga0.7n/aln/gan/ingan/gan structure 期刊论文 European physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 5 作者:  Bi, Y.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Peng, E. C. 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文 european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102 Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ 收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06 ALGAN/GAN/INGAN/GAN DH-HEMTS  FIELD-EFFECT TRANSISTORS  ALGAN/GAN  POLARIZATION  PASSIVATION  HFETS  GHZ   The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi Y;  Lin DF;  Peng EC 收藏  |  浏览/下载：19/0  |  提交时间：2011/09/14 2-DIMENSIONAL ELECTRON-GAS  ALGAN/GAN/INGAN/GAN DH-HEMTS  MILLIMETER-WAVE APPLICATIONS  FIELD-EFFECT TRANSISTORS  HETEROJUNCTION FETS  HETEROSTRUCTURES  PASSIVATION  CONFINEMENT  PERFORMANCE  BARRIERS   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者:  Hou QF;  Zhang ML 收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09 ALGAN/GAN HEMTS