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科研机构
半导体研究所 [149]
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期刊论文 [140]
会议论文 [9]
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2011 [23]
2010 [23]
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2008 [4]
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2006 [15]
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Performance improvement of conjugated polymer and zno hybrid solar cells using nickel oxide as anode buffer layer
期刊论文
Physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 12, 页码: 2865-2870
作者:
Tan, H. R.
;
Zhang, X. W.
;
Tan, F. R.
;
Gao, H. L.
;
Yin, Z. G.
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浏览/下载:25/0
  |  
提交时间:2019/05/12
Anode buffer layers
Hybrid solar cells
Nickel oxides
Zno
Spatial hole burning degradation of algaas/gaas laser diodes
期刊论文
Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3
作者:
Qiao, Y. B.
;
Feng, S. W.
;
Xiong, C.
;
Wang, X. W.
;
Ma, X. Y.
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  |  
浏览/下载:32/0
  |  
提交时间:2019/05/12
Aluminium compounds
Carrier density
Cathodoluminescence
Gallium arsenide
Iii-v semiconductors
Optical hole burning
Optical microscopy
Quantum well lasers
Semiconductor epitaxial layers
X-ray diffraction
Stable organic solar cells employing moo3-doped copper phthalocyanine as buffer layer
期刊论文
Applied surface science, 2011, 卷号: 257, 期号: 22, 页码: 9382-9385
作者:
Cao, Guohua
;
Li, Linsen
;
Guan, Min
;
Zhao, Jie
;
Li, Yiyang
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  |  
浏览/下载:22/0
  |  
提交时间:2019/05/12
Organic solar cells
Moo3-doped cupc film
Buffer layers
Surface morphology
Electrodepostied polyaniline films decorated with nano-islands: characterization and application as anode buffer layers in solar cells
期刊论文
Solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者:
Tan, Furui
;
Qu, Shengchun
;
Wu, Ju
;
Wang, Zhijie
;
Jin, Lan
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  |  
浏览/下载:26/0
  |  
提交时间:2019/05/12
Polyaniline
Electrodeposition
Thin films
Buffer layers
Solar cells
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Hybrid polymer-CdSe solar cells with a ZnO nanoparticle buffer layer for improved efficiency and lifetime
期刊论文
journal of materials chemistry, 2011, 卷号: 21, 期号: 11, 页码: 3814-3817
Qian, Lei
;
Yang, Jihua
;
Zhou, Renjia
;
Tang, Aiwei
;
Zheng, Ying
;
Tseng, Teng-Kuan
;
Bera, Debasis
;
Xue, Jiangeng
;
Holloway, Paul. H.
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浏览/下载:114/0
  |  
提交时间:2012/06/14
Buffer layers
Cadmium alloys
Cadmium compounds
Conversion efficiency
Open circuit voltage
Optical waveguides
Solar cells
Zinc oxide
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:
Yang T
;
Yang XG
;
Wang KF
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浏览/下载:65/2
  |  
提交时间:2011/07/05
HIGH-DENSITY
TEMPERATURE-DEPENDENCE
SELF-FORMATION
LAYERS
WELL
MBE
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
收藏
  |  
浏览/下载:73/0
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提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn
期刊论文
journal of crystal growth, 2011, 卷号: 316, 期号: 1, 页码: 145-148
Yang GD
;
Zhu F
;
Dong S
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  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
Diffusion
Physical vapor deposition processes
Magnetic materials
Semiconducting III-V materials
GASB/MN DIGITAL ALLOYS
ROOM-TEMPERATURE FERROMAGNETISM
RAMAN-SCATTERING
MAGNETOTRANSPORT PROPERTIES
EPITAXIAL LAYERS
THIN-FILMS
SEMICONDUCTORS
STRAIN
MAGNETOELECTRONICS
SPINTRONICS
Tuning Electron Spin States in Quantum Dots by Spin-Orbit Interactions
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.67303
Liu Y
;
Cheng F
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  |  
浏览/下载:41/0
  |  
提交时间:2011/07/05
ARTIFICIAL ATOMS
RESONANCE
MEMORY
LAYERS
WELLS
GATE
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