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Realizing Visible Light Excitation of Tb3+ via Highly Efficient Energy Transfer from Ce3+ for LED-Based Applications 期刊论文
Advanced Optical Materials, 2019, 卷号: 7, 期号: 9, 页码: 6
作者:  W.G.Xiao;  X.F.Liu;  J.H.Zhang;  J.R.Qiu
收藏  |  浏览/下载:1/0  |  提交时间:2020/08/24
Luminescence and energy transfer in Ca3Sc2Si 3O12:Ce3+,Mn2+ white LED phosphors (EI CONFERENCE) 会议论文
Liu Y.; Zhang X.; Hao Z.; Luo Y.; Wang X.; Ma L.; Zhang J.
收藏  |  浏览/下载:31/0  |  提交时间:2013/03/25
Energy transfer in Y3Al5O12:Ce 3, Pr3+ and CaMoO4:Sm3, Eu 3 phosphors (EI CONFERENCE) 会议论文
Zhang J.; Wang L.; Jin Y.; Zhang X.; Hao Z.; Wang X.-J.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
Non-radiative energy transfers (ET) from Ce3 to Pr3+ in Y3Al5O12:Ce3  Pr3+ and from Sm3 to Eu3 in CaMoO4:Sm3  Eu3 are studied based on photoluminescence spectroscopy and fluorescence decay patterns. The result indicates an electric dipoledipole interaction that governs ET in the LED phosphors. For Ce3 concentration of 0.01 in YAG:Ce3  Pr3+  the rate constant and critical distance are evaluated to be 4.510-36 cm 6 s-1 and 0.81 nm  respectively. An increase in the red emission line of Pr3+ relative to the yellow emission band of Ce 3  on increasing Ce3 concentration is observed. This behavior is attributed to the increase of spectral overlap integrals between Ce3 emission and Pr3+ excitation due to the fact that the yellow band shifts to the red spectral side with increasing Ce3 concentration. In CaMoO4:Sm3  Eu3  Sm 3Eu3 transfer occurs from 4G5/2 of Sm3 to 5D0 of Eu3. The rate constant of 8.510-40 cm6 s-1 and the critical transfer distance of 0.89 nm are evaluated. 2010 Elsevier B.V. All rights reserved.  
Preparation, characterization and optical properties of carbon doped ZnO nanocrystal (EI CONFERENCE) 会议论文
ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China
Wang Z.; Li S.; Lu Y.; Zhao D.; Liu J.; Wang L.; Zhang J.; Gao Y.; Wang Z.
收藏  |  浏览/下载:18/0  |  提交时间:2013/03/25
In this paper  we prepared carbon doped nanocrystalline ZnO by pyrolyzed zinc stearate at 250C and 300C respectively. The XRD curves indicate the sample has polycrystalline hexagonal wurtzite structure. The XRD data of the sample prepared at 250C and 300C has a bigger angle shift about 0.05and 0.3respectively. That indicate the structure of the sample has some changes. The EDS indicate the sample contains Zn  O and C. So the XRD shift may attribute to the C. The XPS indicate the C doped in the crystal lattice of ZnO of the sample prepared at 300C  and the sample prepared at 250C may be only a few of C doped in the crystal lattice of ZnO. The PL of the sample prepared at 300C only has a weak ultraviolet emission  which indicates C modified the nanocrystalline ZnO surface as a non-radiative recombination center. In this process C could non-radiatively recombine the carries on the nanocrystallin ZnO surface. The sample prepared at 250C has a strong visible emission at about 530 nm. This emission band could be attributed to oxygen vacancy because C schlepped some oxygen on the nanocrystalline ZnO surface.  
Excitonic properties of vertically aligned ZnO nanotubes under high-density excitation (EI CONFERENCE) 会议论文
Lu Y. M.; Liang H. W.; Shen D. Z.; Zhang Z. Z.; Zhang J. Y.; Zhao D. X.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载:10/0  |  提交时间:2013/03/25
In this paper  highly oriented and vertically arranged ZnO nanotubes are prepared on Al2O3 (0 0 0 1) substrate without employing any metal catalysts by plasma-assisted molecular beam epitaxy. The photoluminescence (PL) spectra at room temperature are studied under high excitation densities. Under lower excitation density (60 kW/cm2)  PL spectrum shows that one strong free exciton emission (FE) locates at 3.306 eV. As the excitation density increases up to 200 kW/cm2  a new emission peak (Pn) located at low-energy side of FE is attributed to the spontaneous emission due to an exciton-exciton (Ex-E x) scattering process from two ground state excitons  where one exciton is recombined by emitting a photon and the other is scattered into the excited states of n=2  3  4.... Under excitation density of 300 kW/cm 2  the stimulated emission originating from Ex-E x scattering is obtained. When the excitation density is above 580 kW/cm2  the emission from electron-hole plasma is observed in low-energy side of the P band and indicates a typical superradiation recombination processes with increasing excitation density. 2006 Elsevier B.V. All rights reserved.  
Energy transfer and red phosphorescence in strontium aluminates doped with Cr3+, Eu2+ and Dy3+ (EI CONFERENCE) 会议论文
Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia, May 15, 2005 - May 20, 2005, Quebec City, QC, Canada
Zhang J.; Zhong R.; Zhang X.; Lu S.; Wang X.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
Cr3+ activated red (694 nm) long persistent phosphorescence originating from 2E-4A2 transition is observed in 4SrO·7Al2O3: Cr3+  Eu2+  Dy3+ system. It is demonstrated that the red phosphorescence is resulted from the conversion of Eu2+ activated blue phosphorescence through persistence energy transfer from Eu2+ to Cr3+. The excitation spectra of the 694 nm emission exhibit strong f-d band of Eu 2+  indicating the existence of the energy transfer. The dependence of lifetimes and intensities of the red and blue emissions on Cr3+ concentrations are studied. The intensity ratio of the red to blue emission bands obtained from photoluminescence spectra is in good agreement with that obtained from fluorescence lifetime measurements. The decay curves of the red phosphorescence at 694nm are also studied.  
Spectroscopic investigations of Er3+ doped Bi2O 3 -B2O3 -SiO2 glass (EI CONFERENCE) 会议论文
ICO20: Materials and Nanostructures, August 21, 2005 - August 26, 2005, Changchun, China
Yang Y.; Chen B.; Wang C.; Ren G.; Wang X.
收藏  |  浏览/下载:22/0  |  提交时间:2013/03/25
Er3+-Doped lutetium borosilicate glass for optical signal amplification at 1.5 m (EI CONFERENCE) 会议论文
Infrared Components and their Applications, November 8, 2004 - November 11, 2004, Beijing, China
Sun J.; Zhang J.; Lu S.; Wang X.
收藏  |  浏览/下载:14/0  |  提交时间:2013/03/25
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.
收藏  |  浏览/下载:21/0  |  提交时间:2013/03/25
In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.  


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