QQ客服 官方微博 反馈留言

浏览/检索结果: 共18条，第1-10条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Orientation Effects of CH3NH3+ on CH3NH3PbI3 Stability and Photoelectric Properties 会议论文 Guiyang, China, July 10, 2015 - July 14, 2015 作者:  Zhou, Jun;  Tang, Fuling;  Xue, Hongtao;  Si, Fengjuan 收藏  |  浏览/下载：12/0  |  提交时间：2020/11/15 Calculations  Convergence of numerical methods  Energy gap  Lead compounds  Perovskite  Perovskite solar cells  Photoelectricity  Thin film solar cells  Change trends  Crystal direction  First-principles calculation  Light absorbers  Organic functional groups  Orientation effect  Photoelectric property  Solar cell materials   Research on photoelectric sensor turbidity detecting system 会议论文 作者:  Ding, Shoucheng;  Li, Wenhui 收藏  |  浏览/下载：11/0  |  提交时间：2020/11/15 Coal mines  Dust  Food processing  Photoelectricity  Sensors  Thermoelectric power plants  Absorbance data  Absorbances  Accurate measurement  Detecting systems  Dust removal  Extinction method  Incident light intensity  Light intensity  On-line detecting  Photoelectric sensors  System hardware  Thermal power plants  Transmitted light intensity   Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector 会议论文 2011 Symposium on Photonics and Optoelectronics, SOPO 2011, Wuhan, China, May 16, 2011 - May 18, 2011 作者:  Li, Xia;  Zhang, Shengdong;  Zhang, Fujia;  Wang, Jing;  Zhang, Haoli 收藏  |  浏览/下载：4/0  |  提交时间：2017/01/20 Detectors  Cathodes  Characterization  Optoelectronic devices  Photoelectricity  Photonics  Silicon  Cathode materials  Fabrication Technologies  I-V  IV characterization  OIHJ  Photo-electric detector  Photoelectric current  PTCDA   Atomic force microscopy and X-ray photoelectron spectroscopy study on the surface and interface states of Liq and ITO films 会议论文 2010 International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2010, Shenzhen, China, November 6, 2010 - November 8, 2010 作者:  Li, Jianfeng;  Song, Qing;  Shi, Weibing;  Zhang, Fujia 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Atomic spectroscopy  Absorption  Absorption spectroscopy  Argon  Atomic force microscopy  Binding energy  Electron energy levels  Electrons  Indium  ITO glass  Materials  O rings  Oxygen  Photoelectricity  Photons  Spectrum analysis  Sputtering  Surface morphology  Surfaces  Tin  X ray photoelectron spectroscopy  X rays  AFM observation  Air molecules  Argon ion  Blue electroluminescent materials  C atoms  Coated glass  Coordination bonds  Different sizes  Effect of oxygen  Indium tin oxide  ITO films  Li atoms  Liq/ITO  Organic light-emitting devices  Organic materials  Quinolate  Sputtering time  Surface and interface electron state  Surface and interface state  X-ray photoelectron spectroscopy studies  XPS  XPS spectra   Study of nanocrystalline ZnO and Zn2TiO4 film electrode with ZnPc Dye and PbS quantum dots composite sensitization 会议论文 Sanya, China, July 29, 2011 - July 31, 2011 作者:  Wang, Qing;  Zhang, Xiaonan;  Huo, Xiaodi;  Zhang, Renhui;  Da, Jianfeng 收藏  |  浏览/下载：7/0  |  提交时间：2020/11/15 Conversion efficiency  Electrodes  Film preparation  Films  Gels  Nanocrystalline materials  Photoelectricity  Semiconducting lead compounds  Semiconductor quantum dots  Sol-gel process  Sol-gels  Sols  Zinc  Zinc oxide  Absorption characteristics  Film electrodes  Nanocrystalline films  Nanocrystalline ZnO  Nanocrystallines  Photoelectric conversion efficiency  Porous film  Quantum Dot  Spin-coating method  TiO  UV-Vis spectrophotometers  XRD  ZnO  Znpc dye   Real-time detection system for photoelectric pulse signals 会议论文 作者:  Zhang, Aihua;  Wang, Hualiang 收藏  |  浏览/下载：12/0  |  提交时间：2020/11/15 Analog to digital conversion  Data handling  Photoelectricity  C8051F020  Detection system  Pulse rate  Pulse signal  Rapid detection  Real-time detection  Realtime processing  Simple operation   The research on distortion measurement and compensation technology in photoelectricity measurement system (EI CONFERENCE) 会议论文 2010 International Conference on Computer, Mechatronics, Control and Electronic Engineering, CMCE 2010, August 24, 2010 - August 26, 2010, Changchun, China Hong F.; Mujun X.; Zhiqian W. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 The distortion made by optical lens largely affect the measurement accuracy of the large field of view photoelectricity measurement system  according to the theory of aberration in the photoelectricity system  this paper design a series of distortion measurement devices  in connection with the process of distortion correction in photoelectricity system  establish the related mathmatics model  make the real time distortion correction by the method of software compensation. The experimental results demonstrate the method decrease the measurement error made by the photoelectricity system distortion  after the compensation  in tatal field of view  the systematic measurement error is less than 0.5 picture element. 2010 IEEE.   Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films 会议论文 Micro- and Nanoelectronics 2003, Zvenigorod, Russia, October 6, 2003 - October 10, 2003 作者:  Khomich, A.V.;  Kovalev, V.I.;  Vedeneev, A.S.;  Kazanskii, A.G.;  Forsh, P.A. 收藏  |  浏览/下载：2/0  |  提交时间：2017/01/20 Microelectronic processing  Annealing  Atomic force microscopy  Photoconductivity  Photoelectricity  Plasma enhanced chemical vapor deposition  Polysilicon  Raman spectroscopy  Thin films  Dangling bonds  Microcrystalline and amorphous silicon films  Spectroscopic ellipsometry   CCD laser collimation system (EI CONFERENCE) 会议论文 Proceedings of the International Symposium on Precision Mechanical Measurement, August 11, 2002 - August 16, 2002, Hefei, China Zhang Y.; Zhang M.; Qiao Y. 收藏  |  浏览/下载：10/0  |  提交时间：2013/03/25 The system adhibits complex optical design  so it may eliminate the effect of image error. For the high power semiconductor laser the system can work in atrocious weather -such as smoking-fog. It manufactures a new 24-bit absolute angle-shaft encoder. There are more reading heads  contrastive readings  so it can eliminate the shaft error for discrepancy 90 degree square wave. It uses high precision liner array CCD  then the system may reduce error codes. The practice proves that the system can measure angle and photoelectricity collimation. The precision keeps ahead in home  so the error of one circle is minute to 1.5 in level and the precision of limit is less than 8 .   Study the I-V and C-V characterization of n-ZnO/p-Si heterojunction (EI收录) 会议论文 Advanced Materials Research, Dalian, China, March 30, 2013 - March 31, 2013 作者:  Chao, Xiong[1,2];  Ding, Li Hua[1];  Jin, Xiao[1];  Lei, Chen[1];  Yuan, Hong Chun[1] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15 Charge carriers  Interface states  Photoelectricity  Silicon  Zinc oxide