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科研机构
半导体研究所 [29]
内容类型
期刊论文 [24]
会议论文 [5]
发表日期
2011 [2]
2009 [2]
2006 [5]
2004 [1]
2003 [7]
2002 [3]
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半导体物理 [29]
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Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability
期刊论文
journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:
Liu J
;
Tan PH
收藏
  |  
浏览/下载:90/4
  |  
提交时间:2011/07/05
FERRIC-CHLORIDE
CHARGE-TRANSFER
SINGLE-LAYER
GRAPHENE
SPECTROSCOPY
SCATTERING
SPECTRA
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:35/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Observation of the surface circular photogalvanic effect in InN films
期刊论文
solid state communications, 2009, 卷号: 149, 期号: 25-26, 页码: 1004-1007
Zhang Z
;
Zhang R
;
Xie ZL
;
Liu B
;
Li M
;
Fu DY
;
Fang HN
;
Xiu XQ
;
Lu H
;
Zheng YD
;
Chen YH
;
Tang CG
;
Wang ZG
收藏
  |  
浏览/下载:158/1
  |  
提交时间:2010/03/08
InN
Surface charge accumulation layer
Spin-dependent current
Spin splitting
An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 058501
作者:
Yang H
;
Wang H
;
Zhu JJ
;
Jiang DS
;
Wang H
收藏
  |  
浏览/下载:195/36
  |  
提交时间:2010/03/08
SINGLE-CRYSTAL GAN
HETEROJUNCTION
DETECTORS
PHOTODIODES
LAYER
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
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  |  
浏览/下载:113/32
  |  
提交时间:2010/03/29
quantum dots
photoluminescence
combination layer
1.3 MU-M
LASERS
INALAS
Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 2, 页码: 489-492
Peng CX
;
Weng HM
;
Yang XJ
;
Ye BJ
;
Cheng B
;
Zhou XY
;
Han RD
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  |  
浏览/下载:235/9
  |  
提交时间:2010/04/11
P-TYPE ZNO
THIN-FILMS
ROOM-TEMPERATURE
PHOTOLUMINESCENCE
DEPOSITION
SUBSTRATE
VACANCIES
LAYER
BEAM
GAN
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
Zeng, YX (Zeng, Yuxin)
;
Liu, W (Liu, Wei)
;
Yang, FH (Yang, Fuhua)
;
Xu, P (Xu, Ping)
;
Tan, PH (Tan, Pingheng)
;
Zheng, HZ (Zheng, Houzhi)
;
Zeng, YP (Zeng, Yiping)
;
Xing, YJ (Xing, Yingjie)
;
Yu, DP (Yu, Dapeng)
收藏
  |  
浏览/下载:98/31
  |  
提交时间:2010/03/29
InAs quantum dot
photoluminescence
modulation-doped
field effect transistor
MU-M
CAPPING LAYER
Optical characteristics of InAs quantum dots on GaAs matrix by using various InGaAs structures
期刊论文
journal of wuhan university of technology-materials science edition, 2006, 卷号: 21, 期号: 2, 页码: 76-79
Kong LM (Kong Lingmin)
;
Cai JF (Cai Jiafa)
;
Wu ZY (Wu Zhengyun)
;
Gong Z (Gong Zheng)
;
Fang ZD (Fang Zhidan)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/04/11
InGaAs layer
InAs quantum dots
time-resolved PL spectra
1.3 MU-M
CARRIER DYNAMICS
LASERS
GROWTH
WAVELENGTH
EMISSION
ISLANDS
LAYERS
SIZE
Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 117-120
Gao HY (Gao Haiyong)
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  |  
浏览/下载:32/0
  |  
提交时间:2010/04/11
GaN nanorods
Ga2O3/ZnO films
RF magnetron sputtering
nitridation
OPTICAL-PROPERTIES
LASER-DIODES
ZNO
SUBSTRATE
NANOWIRES
LAYER
Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells
期刊论文
journal of applied physics, 2004, 卷号: 95, 期号: 8, 页码: 4362-4366
Lu, W
;
Li, DB
;
Li, CR
;
Shen, F
;
Zhang, Z
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  |  
浏览/下载:303/45
  |  
提交时间:2010/03/09
CRITICAL LAYER THICKNESS
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