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| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者: Yang T ; Yang XG; Wang KF
  收藏 | 浏览/下载：65/2 | 提交时间：2011/07/05
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| High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
收藏 | 浏览/下载：150/30 | 提交时间：2010/04/13
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| Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui)
收藏 | 浏览/下载：221/51 | 提交时间：2010/05/24
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| Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124215
Wang Y; Pan JQ; Zhao LJ; Zhu HL; Wang W
收藏 | 浏览/下载：46/1 | 提交时间：2011/07/05
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| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏 | 浏览/下载：196/52 | 提交时间：2010/04/28
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| Properties of exchange interaction in Yb3Fe5O12 under extreme conditions 期刊论文
journal of magnetism and magnetic materials, 2009, 卷号: 321, 期号: 19, 页码: 3307-3310
Wang W; Li DY
收藏 | 浏览/下载：103/2 | 提交时间：2010/03/08
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| Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture 期刊论文
physical review b, 2007, 卷号: 76, 期号: 12, 页码: art.no.125404
Ding F (Ding Fei); Chen YH; Tang CG; Xu B (Xu Bo); Wang ZG
收藏 | 浏览/下载：35/0 | 提交时间：2010/03/29
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| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
作者: Xu B; Ye XL
收藏 | 浏览/下载：63/0 | 提交时间：2010/08/12
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| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者: Xu B; Li CM; Jin P; Ye XL; Li DB
收藏 | 浏览/下载：97/0 | 提交时间：2010/08/12
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| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194
Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG
收藏 | 浏览/下载：102/11 | 提交时间：2010/08/12
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