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浏览/检索结果: 共13条，第1-10条 帮助 限定条件 发表日期：2014     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric 期刊论文 SCIENCE CHINA-INFORMATION SCIENCES, 2014 Wei KangLiang; Egley, James; Liu XiaoYan; Du Gang 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 carrier transport  full Coulomb interaction  gate dielectric  high-kappa  Monte Carlo (MC)  FinFET  remote charge scattering (RCS)  FIELD-EFFECT-TRANSISTORS  MONTE-CARLO-SIMULATION  OXIDE-SEMICONDUCTOR TRANSISTORS  ELECTRON-MOBILITY  LIMITED MOBILITY  MOSFETS  DEGRADATION  STACKS   The Coulomb effect on a low-energy structure in above-threshold ionization spectra induced by mid-infrared laser pulses 期刊论文 chinese physics b, 2014 Lin Zhi-Yang; Wu Ming-Yan; Quan Wei; Liu Xiao-Jun; Chen Jing; Cheng Ya 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/16 low-energy structure  above-threshold ionization  electron-ion Coulomb interaction  STRONG-FIELD IONIZATION  ATOMS  DISTRIBUTIONS  SCATTERING  MOMENTUM  PLATEAU  LIMIT   Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文 中国物理B, 2014, 卷号: 23, 期号: 4, 页码: 521-524 作者:  Yu YX(于英霞);  Lin ZJ(林兆军);  Luan CB(栾崇彪);  Lv YJ(吕元杰);  Feng ZH(冯志红) 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors  channel electric field distribution  polarization Coulomb field scattering  two-dimensional electron gas mobility   Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 半导体学报（英文版）, 2014, 期号: 9, 页码: 65-70 作者:  Luan Chongbiao;  Lin Zhaojun;  Lü Yuanjie;  Feng Zhihong;  Zhao Jingtao 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Ⅲ-Ⅴ nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering  2DEG electron mobility   The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 半导体学报（英文版）, 2014, 卷号: 35, 期号: 12 作者:  Yu, Yingxia;  Lin, Zhaojun;  , Yuanjie;  Feng, Zhihong;  Luan, Chongbiao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 AlN/GaN heterostructure field-effect transistors  channel electric field distribution  polarization Coulomb field scattering  electron mobility   The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 期号: 12, 页码: 52-56 作者:  Yu YX(于英霞);  Lin ZJ(林兆军);  Lv YJ(吕元杰);  Feng ZH(冯志红);  Luan CB(栾崇彪) 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlN/GaN heterostructure field-effect transistors  channel electric field distribution  polarization Coulomb field scattering  electron mobility   Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Physica, E. Low-dimensional systems & nanostructures, 2014, 页码: 76-79 作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Zhihong Feng;  Jingtao Zhao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN HFETs   Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 期号: 09, 页码: 69-74 作者:  Luan CB(栾崇彪);  Lin ZJ(林兆军);  Lv YJ(吕元杰);  Feng ZH(冯志红);  Zhao JT(赵景涛) 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 III–V nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering  2DEG electron mobility   Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 卷号: 35, 期号: 9 作者:  Luan, Chongbiao;  Lin, Zhaojun;  , Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 2DEG electron mobility  III-V nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering   Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 卷号: 62, 页码: 76-79 作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN  HFETs