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浏览/检索结果: 共15条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy 期刊论文 superlattices and microstructures, 2013, 卷号: 64, 页码: 543 Su, SJ; Zhang, DL; Zhang, GZ; Xue, CL; Cheng, BW 收藏  |  浏览/下载：16/0  |  提交时间：2014/04/04 Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain 期刊论文 ieee electron device letters, 2012, 卷号: 33, 期号: 5, 页码: 634-636 Han, GQ; Su, SJ; Zhou, Q; Guo, PF; Yang, Y; Zhan, CL; Wang, LX; Wang, W; Wang, QM; Xue, CL; Cheng, BW; Yeo, YC 收藏  |  浏览/下载：19/0  |  提交时间：2013/03/17 Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate 期刊论文 thin solid films, 2012, 卷号: 520, 期号: 16, 页码: 5361-5366 Hu, WX; Cheng, BW; Xue, CL; Su, SJ; Liu, Z; Li, YM; Wang, QM; Wang, LJ; Liu, JQ; Ding, J; Lin, GJ; Lin, ZD 收藏  |  浏览/下载：10/0  |  提交时间：2013/02/04 Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文 ieee electron device letters, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531 Wang LX (Wang, Lanxiang); Su SJ (Su, Shaojian); Wang W (Wang, Wei); Yang Y (Yang, Yue); Tong Y (Tong, Yi); Liu B (Liu, Bin); Guo PF (Guo, Pengfei); Gong X (Gong, Xiao); Zhang GZ (Zhang, Guangze); Xue CL (Xue, Chunlai); Cheng BW (Cheng, Buwen); Han GQ (Han, Genquan); Yeo YC (Yeo, Yee-Chia) 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/27 Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping 期刊论文 optics express, 2012, 卷号: 20, 期号: 20, 页码: 22327-22333 Liu Z (Liu, Zhi); Hu WX (Hu, Weixuan); Su SJ (Su, Shaojian); Li C (Li, Chong); Li CB (Li, Chuanbo); Xue CL (Xue, Chunlai); Li YM (Li, Yaming); Zuo YH (Zuo, Yuhua); Cheng BW (Cheng, Buwen); Wang QM (Wang, Qiming) 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/27 Lattice constant deviation from Vegard 期刊论文 acta physica sinica, 2012, 卷号: 61, 期号: 17, 页码: 176104 Su SJ (Su Shao-Jian); Cheng BW (Cheng Bu-Wen); Xue CL (Xue Chun-Lai); Zhang DL (Zhang Dong-Liang); Zhang GZ (Zhang Guang-Ze); Wang QM (Wang Qi-Ming) 收藏  |  浏览/下载：13/0  |  提交时间：2013/04/02 Room-temperature direct-bandgap photoluminescence from strain-compensated Ge/SiGe multiple quantum wells on silicon 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 1, 页码: 17805 Hu, WX; Cheng, BW; Xue, CL; Zhang, GZ; Su, SJ; Zuo, YH; Wang, QM 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 GeSn p-i-n photodetector for all telecommunication bands detection 期刊论文 optics express, 2011, 卷号: 19, 期号: 7, 页码: 6408-6413 Su SJ; Cheng BW; Xue CL; Wang W; Cao QA; Xue HY; Hu WX; Zhang GZ; Zuo YH; Wang QM 收藏  |  浏览/下载：71/5  |  提交时间：2011/07/05 HIGH-PERFORMANCE  SEMICONDUCTORS  SILICON   Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 126801 Hu WX (Hu Wei-Xuan); Cheng BW (Cheng Bu-Wen); Xue CL (Xue Chun-Lai); Su SJ (Su Shao-Jian); Wang QM (Wang Qi-Ming) 收藏  |  浏览/下载：14/0  |  提交时间：2012/02/22 Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471 Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM 收藏  |  浏览/下载：98/7  |  提交时间：2011/07/05 Germanium tin alloys  Germanium buffer  Surface morphology evolution  Mass transport  SURFACE  GROWTH  EVOLUTION  DECAY