QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of growth temperature of algan buffer layer on the properties of a1(0.58)ga(0.42)n epilayer by nh3-mbe 期刊论文 Physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409 作者:  Wang, Xiaoyan;  Wang, Xiaoliang;  Wang, Baozhu;  Xiao, Hongling;  Wang, Junxi 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Algan/aln/gan/sic hemt structure with high mobility gan thin layer as channel grown by mocvd 期刊论文 Journal of crystal growth, 2007, 卷号: 298, 页码: 835-839 作者:  Wang, Xiaoliang;  Hu, Guoxin;  Ma, Zhiyong;  Ran, Junxue;  Wang, Cuimei 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 2deg  Mocvd  Algan/gan  Hemt  Power device   AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 2DEG   Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文 physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409 Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin) 收藏  |  浏览/下载：46/0  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY   High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文 33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006 Wang, XY (Wang, Xiaoyan); Wang, XL (Wang, Xiaoliang); Wang, BZ (Wang, Baozhu); Xiao, HL (Xiao, Hongling); Liu, HX (Liu, Hongxin); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：125/38  |  提交时间：2010/03/29 BUFFER LAYER  STRESS  PHOTODIODES  REDUCTION  DETECTORS  SAPPHIRE  EPITAXY  GROWTH   Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 235-238 Ran JX (Ran Junxue); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Li JP (Li Jianping); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：137/0  |  提交时间：2010/03/29 doping   Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803 Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 deep defect   Investigation of optical quenching of photoconductivity in high-resistivity gan epilayer 期刊论文 Journal of crystal growth, 2007, 卷号: 298, 页码: 800-803 作者:  Fang, Cebao;  Wang, Xiaoliang;  Xiao, Hongling;  Hu, Guoxin;  Wang, Cuimei 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Deep defect  Optical quenching  Mocvd  Gan