QQ客服 官方微博 反馈留言

浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文 journal of crystal growth, 2016, 卷号: 443, 页码: 85-89 Wei Xiang; Guowei Wang; Hongyue Hao; Yongping Liao; Xi Han; Lichun Zhang; Yingqiang Xu; Zhengwei Ren; Haiqiao Ni; Zhenhong He; Zhichuan Niu 收藏  |  浏览/下载：36/0  |  提交时间：2017/03/16 Mbe growth of very short period inas/gasb type-ii superlattices on (001) gaas substrates 期刊论文 Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 21, 页码: 6690-6693 作者:  Hao, Ruiting;  Xu, Yingqiang;  Zhou, Zhiqiang;  Ren, Zhengwei;  Ni, Haiqiao 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Growth of gasb layers on gaas (001) substrate by molecular beam epitaxy 期刊论文 Journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1080-1084 作者:  Hao, Ruiting;  Xu, Yingqiang;  Zhou, Zhiqiang;  Ren, Zhengwei;  Ni, Haiqiao 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 4, 页码: 1080-1084 Hao RT (Hao Ruiting); Xu YQ (Xu Yingqiang); Zhou ZQ (Zhou Zhiqiang); Ren ZW (Ren Zhengwei); Ni HQ (Ni Haiqiao); He ZH (He Zhenhong); Niu ZC (Niu, Zhichuan) 收藏  |  浏览/下载：92/0  |  提交时间：2010/03/29 INFRARED PHOTODIODES   MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates 期刊论文 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 21, 页码: 6690-6693 Hao RT (Hao Ruiting); Xu YQ (Xu Yingqiang); Zhou ZQ (Zhou Zhiqiang); Ren ZW (Ren Zhengwei); Ni HQ (Ni Haiqiao); He ZH (He Zhenhong); Niu ZC (Niu Zhichuan) 收藏  |  浏览/下载：23/0  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY