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Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes 期刊论文
OPTICS EXPRESS, 2021, 卷号: 29, 期号: 21, 页码: 33992-34001
作者:  Hou, Yufei;   Zhao, Degang;   Chen, Ping;   Liang, Feng;   Liu, Zongshun;   Yang, Jing
收藏  |  浏览/下载：10/0  |  提交时间：2022/03/28
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2021, 卷号: 130, 期号: 17, 页码: 173105
作者:  Yang, J.;   Wang, B. B.;   Zhao, D. G.;   Liu, Z. S.;   Liang, F.;   Chen, P.;   Zhang, Y. H.;   Zhang, Z. Z.
收藏  |  浏览/下载：8/0  |  提交时间：2022/03/24
The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H-2/NH3 Mixed Gas for Improving Structural and Optical Properties 期刊论文
NANOSCALE RESEARCH LETTERS, 2021, 卷号: 16, 期号: 1, 页码: 161
作者:  Ben, Yuhao;   Liang, Feng;   Zhao, Degang;   Yang, Jing;   Liu, Zongshun;   Chen, Ping
收藏  |  浏览/下载：14/0  |  提交时间：2022/03/24
The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes 期刊论文
APPLIED SURFACE SCIENCE, 2021, 卷号: 570, 页码: 151132
作者:  Wang, Xiao-Wei;   Liang, Feng;   Zhao, De-Gang;   Chen, Ping;   Liu, Zong-Shun;   Yang, Jing
收藏  |  浏览/下载：11/0  |  提交时间：2022/03/23
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment 期刊论文
RESULTS IN PHYSICS, 2021, 卷号: 31, 页码: 105057
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Liu, Zongshun;   Chen, Ping;   Yang, Jing
收藏  |  浏览/下载：12/0  |  提交时间：2022/03/23
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 874, 页码: 159851
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun
收藏  |  浏览/下载：26/0  |  提交时间：2022/03/28
The influence of residual GaN on two-step-grown GaN on sapphire 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 期号: 135, 页码: 105903
作者:  Peng, Liyuan;   Liu, Shuangtao;   Yang, Jing;   Zhao, Degang;   Liang, Feng;   Chen, Ping;   Liu, Zongshun
收藏  |  浏览/下载：16/0  |  提交时间：2022/03/24
Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures 期刊论文
AIP ADVANCES, 2020, 卷号: 10, 期号: 6, 页码: 065122
作者:  Jianxing Xu;   Xiaodong Tong;   Shiyong Zhang;   Zhe Cheng;   Lian Zhang;   Penghui Zheng;   Feng-Xiang Chen;   Rong Wang;   Yun Zhang;   Wei Tan
收藏  |  浏览/下载：16/0  |  提交时间：2021/06/16
Acceptor Decoration of Threading Dislocations in ( Al , Ga ) N / Ga N Heterostructures 期刊论文
PHYSICAL REVIEW APPLIED, 2020, 卷号: 14, 期号: 2, 页码: 024039
作者:  Rong Wang;   Xiaodong Tong;   Jianxing Xu;   Chenglong Dong;   Zhe Cheng;   Lian Zhang;   Shiyong Zhang;   Penghui Zheng;   Feng-Xiang Chen;   Yun Zhang;   Wei Tan
收藏  |  浏览/下载：22/0  |  提交时间：2021/06/22
Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 11, 页码: 111001
作者:  Di Niu;   Quan Wang;   Wei Li;   Changxi Chen;   Jiankai Xu;   Lijuan Jiang;   Chun Feng;   Hongling Xiao;   Qian Wang;   Xiangang Xu;   Xiaoliang Wang
收藏  |  浏览/下载：9/0  |  提交时间：2021/05/24

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