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基于灵敏度分析的动态指标选取方法 期刊论文
《计算机仿真》, 2005, 卷号: 22, 页码: 120-123
作者:  李盛阳 [1] 张晓武 [2];  邢立宁 [3]
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/08
An Analytic Model for Ge/Si Core/Shell Nanowire MOSFETs Considering Drift-Diffusion and Ballistic Transport (CPCI-S收录) 会议论文
ISQED 2009: PROCEEDINGS 10TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, VOLS 1 AND 2
作者:  Zhang, Lining[1,2];  He, Jin[1,2];  Zhang, Jian[2];  Liu, Feng[2];  Fu, Yue[2]
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Generic DG MOSFET Analytic Model with Vertical Electric Field Induced Mobility Degradation Effects (CPCI-S收录) 会议论文
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009)
作者:  Zhou, Xingye[1,2,4];  Zhang, Lining[2];  Zhang, Jian[2];  He, Frank[1,2,3];  Zhang, Xing[2]
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