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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 专题：山东大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120 作者:  Liu, Huan;  Cheng, Aijie;  Lin, Zhaojun;  Cui, Peng;  Liu, Yan 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 AIGaN/GaN HFETs  Diffused Ohmic contact metal atoms  Polarization  Coulomb field scattering   ELM model for power system transient stability assessment 期刊论文 Proceedings - 2017 Chinese Automation Congress, CAC 2017, 2017, 卷号: 2017-January, 页码: 5740-5744 作者:  Zhang, Linlin;  Hu, Xiongwei;  Li, Peng;  Shi, Fang;  Yu, Zhihong 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/12 ELM  feature analysis  power system  transient stability   ELM Model for Power System Transient Stability Assessment 会议论文 Chinese Automation Congress (CAC), OCT 20-22, 2017 作者:  Zhang Linlin;  Hu Xiongwei;  Li Peng;  Shi Fang;  Yu Zhihong 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 power system  transient stability  ELM  feature analysis   Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 10, 页码: 3908-3913 作者:  Yang, Ming;  Lv, Yuanjie;  Feng, Zhihong;  Lin, Wei;  Cui, Peng 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/16 AlGaN/GaN heterostructure FETs (HFETs)  extrinsic transconductance  polarization Coulomb field (PCF) scattering   Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors 期刊论文 JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 119, 期号: 22 作者:  Yang, Ming;  Lv, Yuanjie;  Feng, Zhihong;  Lin, Wei;  Cui, Peng 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/16 Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 4, 页码: 1471-1477 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Cui, Peng;  Fu, Chen 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/16 AlGaN/GaN heterostructure FETs (HFETs)  extrinsic transconductance  parasitic source access resistance  polarization Coulomb field (PCF)  scattering   Demographic and clinical characteristics related to cognitive decline in Alzheimer disease in China: A multicenter survey from 2011 to 2014 期刊论文 MEDICINE, 2016, 卷号: 95, 期号: 26 作者:  Peng, Dantao;  Shi, Zhihong;  Xu, Jun;  Shen, Lu;  Xiao, Shifu 收藏  |  浏览/下载：41/0  |  提交时间：2019/12/16 Alzheimer disease  assessment instrument  risk factors  symptom duration   Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 100, 页码: 358-364 作者:  Cui, Peng;  Liu, Huan;  Lin, Zhaojun;  Cheng, Aijie;  Liu, Yan 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17 AlGaN/GaN HFETs  Cap layer thickness  Polarization Coulomb field  scattering   Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 卷号: 121, 期号: 3, 页码: 1271-1276 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 APPLIED PHYSICS LETTERS, 2015, 卷号: 107, 期号: 11 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17