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CORC

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Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 卷号: 34, 期号: 7
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Liang, Guangda
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 3, 页码: 451-454
作者:  Du, Lulu;  Xin, Qian;  Xu, Mingsheng;  Liu, Yaxuan;  Mu, Wenxiang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/11
Extremely high-gain source-gated transistors 期刊论文
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2019, 卷号: 116, 期号: 11, 页码: 4843-4848
作者:  Zhang, Jiawei;  Wilson, Joshua;  Auton, Gregory;  Wang, Yiming;  Xu, Mingsheng
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 10, 页码: 4326-4333
作者:  Du, Lulu;  Zhang, Jiawei;  Li, Yunpeng;  Xu, Mingsheng;  Wang, Qingpu
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11
Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 11, 页码: 1696-1699
作者:  Liu, Yaxuan;  Du, Lulu;  Liang, Guangda;  Mu, Wenxiang;  Jia, Zhitai
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars 期刊论文
JOURNAL OF LUMINESCENCE, 2018, 卷号: 203, 页码: 216-221
作者:  Xu, Xinglian;  Wang, Qiang;  Li, Changfu;  Ji, Ziwu;  Xu, Mingsheng
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11
GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 9
作者:  Zhu, Gengchang;  Wang, Yiming;  Xin, Qian;  Xu, Mingsheng;  Chen, Xiufang
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11
Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 9, 页码: 1334-1337
作者:  Du, Lulu;  He, Dandan;  Liu, Yaxuan;  Xu, Mingsheng;  Wang, Qingpu
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11
Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9
作者:  Li, Jianfei;  Lv, Yuanjie;  Li, Changfu;  Ji, Ziwu;  Pang, Zhiyong
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11
Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs∗ 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 9
作者:  Li, Jianfei;  Lv, Yuanjie;  Li, Changfu;  Ji, Ziwu;  Pang, Zhiyong
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/12

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