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CORC

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Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 257-260
Bi, DW; Zhang, ZX; Chen, M; Wu, AM; Wei, X; Wang, X
收藏  |  浏览/下载：15/0  |  提交时间：2013/04/17
Transportation of carriers in silicon implanted SiO2 films during ionizing radiation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 266-270
Chen, M; Zhang, ZX; Wei, X; Bi, DW; Zou, SC; Wang, X
收藏  |  浏览/下载：8/0  |  提交时间：2013/04/17
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology 期刊论文
MICROELECTRONICS RELIABILITY, 2012, 卷号: 52, 期号: 1, 页码: 130-136
Ning, BX; Zhang, ZX; Liu, ZL; Hu, ZY; Chen, M; Bi, DW; Zou, SC
收藏  |  浏览/下载：14/0  |  提交时间：2013/04/17
The influence of channel length on total ionizing dose effect in deep submicron technologies 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 5, 页码: 50702
Hu, ZY; Liu, ZL; Shao, H; Zhang, ZX（重点实验室）; Ning, BX; Bi, DW（重点实验室）; Chen, M; Zou, SC（重点实验室）
收藏  |  浏览/下载：50/0  |  提交时间：2013/05/10
Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment 期刊论文
MICROELECTRONIC ENGINEERING, 2012, 卷号: 93, 页码: 15-18
Xu, DW; Cheng, XH; Zhang, YW; Wang, ZJ; Xia, C; Cao, D; Yu, YH; Shen, DS
收藏  |  浏览/下载：10/0  |  提交时间：2013/04/17
The influence of channel length on total ionizing dose effect in deep submicron technologies 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 5, 页码: 50702
Hu, ZY; Liu, ZL; Shao, H; Zhang, ZX; Ning, BX; Bi, DW; Chen, M; Zou, SC
收藏  |  浏览/下载：19/0  |  提交时间：2013/04/17
Realization of 850 V breakdown voltage LDMOS on Simbond SOI 期刊论文
MICROELECTRONIC ENGINEERING, 2012, 卷号: 91, 页码: 102-105
Wang, ZJ; Cheng, XH; He, DW; Xia, C; Xu, DW; Yu, YH; Zhang, D; Wang, YY; Lv, YQ; Gong, DW; Shao, K
收藏  |  浏览/下载：21/0  |  提交时间：2013/04/17
Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 257-260
Bi, DW（重点实验室）; Zhang, ZX（重点实验室）; Chen, M; Wu, AM（重点实验室）; Wei, X; Wang, X（重点实验室）
收藏  |  浏览/下载：11/0  |  提交时间：2013/05/10
Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment 期刊论文
MICROELECTRONIC ENGINEERING, 2012, 卷号: 93, 页码: 15-18
Xu, DW; Cheng, XH; Zhang, YW; Wang, ZJ; Xia, C; Cao, D; Yu, YH; Shen, DS
收藏  |  浏览/下载：12/0  |  提交时间：2013/05/10
Transportation of carriers in silicon implanted SiO2 films during ionizing radiation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 266-270
Chen, M; Zhang, Z（重点实验室）X; Wei, X; Bi, DW（重点实验室）; Zou, S（重点实验室）C; Wang, X（重点实验室）
收藏  |  浏览/下载：12/0  |  提交时间：2013/05/10

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