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浏览/检索结果: 共16条，第1-10条 帮助 限定条件 内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 MAP4K4 deficiency in CD4~+ T cells aggravates lung damage induced by ozone-oxidized black carbon particles 其他 2016-01-01 Ming Jin; Hongqian Chu; Yuan Li; Xi Tao; Zhiyuan Cheng; Yao Pan; Qinghe Meng; Leilei Li; Xiaohong Hou; Yueyue Chen; Hongpeng Huang; Guang jia; Jing Shang; Tong Zhu; Lanqin Shang; Weidong Hao; Xuetao Wei 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 ozone-oxidized black carbon  MAP4K4  CD4~+ T cell  CD4~+IL17~+ T cell  lung inflammation  ozone-oxidized black carbon  MAP4K4  CD4~+ T cell  CD4~+IL17~+ T cell  lung inflammation   Influence of polymer residues on the double resonance process of bilayer graphene 其他 2016-01-01 Gong, Xin; Jia, Yue-Hui; Peng, Pei; Wang, Zi-Dong; Tian, Zhong-Zheng; Ren, Li-Ming; Fu, Yun-Yi 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures 其他 2016-01-01 Chen, Shen-Li; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Chen, Hung-Wei 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Electrostatic discharge (ESD)  N-channel lateral-diffused MOSFET (nLDMOS)  Secondary breakdown current (I-t2)  Shallow-trench isolation (STI)  Silicon-controller rectifier (SCR)   ESD Reliability Evaluations of the 60-V nLDMOS by the Drain-side Discrete SCRs 其他 2016-01-01 Chen, Shen-Li; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 LDMOS   Design on ESD Robustness of Source-side Discrete Distribution in the 60-V High-Voltage nLDMOS Devices 其他 2016-01-01 Chen, Shen-Li; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 LDMOS   ESD reliability improvement of the 0.25-��m 60-V power nLDMOS with discrete embedded SCRs separated by STI structures 其他 2016-01-01 Chen, Shen-Li; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Chen, Hung-Wei 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 ESD-reliability characterizations of a 45-V p-channel LDMOS-SCR with the discrete-cathode end 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Design on ESD robustness of source-side discrete distribution in the 60-V high-voltage nLDMOS devices 其他 2016-01-01 Chen, Shen-Li; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 ESD reliability evaluations of the 60-V nLDMOS by the drain-side discrete SCRs 其他 2016-01-01 Chen, Shen-Li; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 ESD-Reliability Characterizations of a 45-V p-Channel LDMOS-SCR with the Discrete-Cathode End 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 P-type laterally-diffused metal oxide semiconductor (pLDMOS)  Electrostatic Discharge (ESD)  Holding voltage (V-h)  Secondary breakdown current (I-t2)