CORC

浏览/检索结果: 共10条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Measurement of Upsilon production in pp collisions at root s = 13TeV (vol 134, 1804.09214, 2018) 其他
2019-01-01
作者:  Aaij, R.;  Adeva, B.;  Adinolfi, M.;  Ajaltouni, Z.;  Akar, S.
收藏  |  浏览/下载:39/0  |  提交时间:2019/12/05
Measurement of the CKM angle using B-+/- DK +/- with D -> KS0(+-),(KsK+K-)-K-0 decays (vol 08, 176, 2018) 其他
2018-01-01
作者:  Aaij, R.;  Adeva, B.;  Adinolfi, M.;  Aidala, C. A.;  Ajaltouni, Z.
收藏  |  浏览/下载:14/0  |  提交时间:2019/12/05
Measurement of the CKM angle using B-+/- DK +/- with D -> KS0(+-),(KsK+K-)-K-0 decays (vol 08, 176, 2018) 其他
2018-01-01
作者:  Aaij, R.;  Adeva, B.;  Adinolfi, M.;  Aidala, C. A.;  Ajaltouni, Z.
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/05
Monitoring ground surface displacement in the three gorges area, dangxiong-lasha and jiangsu province area 其他
2013-01-01
Singleton, A.; Muller, J.-P.; Zeng, Q.; Zhang, J.; Li, Z.; Larkin, H.; Li, X.; Liu, P.; Kincal, C.; Yan, D.; Liang, C.; Cui, X.; Zhou, X.; Wang, Q.; Gao, S.; Yun, Y.; Xiong, S.; Gong, L.; Jiang, W.; Luo, Y.; He, X.; He, M.
收藏  |  浏览/下载:4/0  |  提交时间:2015/11/17
Improvement of Endurance Degradation for Oxide Based Resistive Switching Memory Devices Correlated With Oxygen Vacancy Accumulation Effect 其他
2012-01-01
Lu, Y.; Chen, B.; Gao, B.; Fang, Z.; Fu, Y. H.; Yang, J. Q.; Liu, L. F.; Liu, X. Y.; Yu, H. Y.; Kang, J. F.
收藏  |  浏览/下载:7/0  |  提交时间:2015/11/13
Bias temperature instability of binary oxide based reram 其他
2010-01-01
Fang, Z.; Yu, H.Y.; Liu, W.J.; Pey, K.L.; Li, X.; Wu, L.; Wang, Z.R.; Lo, Patrick G.Q.; Gao, B.; Kang, J.F.
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/13
Oxide-based RRAM: Physical based retention projection 其他
2010-01-01
Gao, B.; Kang, J.F.; Zhang, H.W.; Sun, B.; Chen, B.; Liu, L.F.; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Yu, B.; Fang, Z.; Yu, H.Y.; Kwong, D.-L.
收藏  |  浏览/下载:2/0  |  提交时间:2015/11/13
Identification and application of current compliance failure phenomenon in RRAM device 其他
2010-01-01
Gao, B.; Chang, W.Y.; Sun, B.; Zhang, H.W.; Liu, L.F.; Liu, X.Y.; Han, R.Q.; Wu, T.B.; Kang, J.F.
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/13
Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology 其他
2009-01-01
Gao, B.; Zhang, H.W.; Yu, S.; Sun, B.; Liu, L.F.; Liu, X.Y.; Wang, Y.; Han, R.Q.; Kang, J.F.; Yu, B.; Wang, Y.Y.
收藏  |  浏览/下载:4/0  |  提交时间:2017/12/03
Oxide-Based RRAM: Uniformity Improvement Using A New Material-Oriented Methodology 其他
2009-01-01
Gao, B.; Zhang, H. W.; Yu, S.; Sun, B.; Liu, L. F.; Liu, X. Y.; Wang, Y.; Han, R. Q.; Kang, J. F.; Yu, B.; Wang, Y. Y.
收藏  |  浏览/下载:4/0  |  提交时间:2015/11/13


©版权所有 ©2017 CSpace - Powered by CSpace