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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intri (CPCI-S收录) 会议论文 NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING 作者:  Zhou, Xingye[1];  Zhang, Jian[1];  Zhang, Lining[1];  Ma, Chenyue[1];  He, Jin[1,2] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/17 An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET (CPCI-S收录) 会议论文 NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING 作者:  Zhou, Xingye[1,2];  Che, Yuchi[1,2];  Zhang, Lining[1,2];  He, Jin[1,2];  Chan, Mansun[3] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/17 Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics (CPCI-S收录) 会议论文 NANOTECH CONFERENCE & EXPO 2009, VOL 3, TECHNICAL PROCEEDINGS: NANOTECHNOLOGY 2009: BIOFUELS, RENEWABLE ENERGY, COATINGS FLUIDICS AND COMPACT MODELING 作者:  Song, Yan[1,2];  Zhang, Lining[2];  Zhang, Jian[2];  Zhou, Xingye[1,2];  Che, Yuchi[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/17 non-classical MOS transistor  double-gate MOSFETs  device physics  surface potential model  computation efficiency   Generic DG MOSFET Analytic Model with Vertical Electric Field Induced Mobility Degradation Effects (CPCI-S收录) 会议论文 2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) 作者:  Zhou, Xingye[1,2,4];  Zhang, Lining[2];  Zhang, Jian[2];  He, Frank[1,2,3];  Zhang, Xing[2] 收藏  |  浏览/下载：0/0  |  提交时间：2019/04/17