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Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 50, 期号: 7, 页码: 70211
Du,XF; Zhang,T; Song,ZT; Liu,WL; Liu,XY; Gu,YF; Lv,SL; Xue,WJ; Xi,W
收藏  |  浏览/下载:48/0  |  提交时间:2012/04/10
Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 50, 期号: 7, 页码: 70211
Du, XF; Zhang, T; song, zt(重点实验室); Liu, WL; Liu, XY; Gu, YF; Lv, SL; Xue, WJ; Xi, WFeng, SL
收藏  |  浏览/下载:11/0  |  提交时间:2013/05/10


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