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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 979-983 Zhao, H (Zhao, H.); Xu, YQ (Xu, Y. Q.); Ni, HQ (Ni, H. Q.); Zhang, SY (Zhang, S. Y.); Han, Q (Han, Q.); Du, Y (Du, Y.); Yang, XH (Yang, X. H.); Wu, RH (Wu, R. H.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 photoluminescence   Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008 作者:  Yang XH 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 LASERS  TEMPERATURE  PHOTOLUMINESCENCE   Design and fabrication of 1.06 mu m resonant-cavity enhanced reflective modulator with GaInAs/GaAs quantum wells 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 12, 页码: 3376-3379 Yang XH (Yang Xiao-Hong); Han Q (Han Qin); Ni HQ (Ni Hai-Qiao); Huang SS (Huang She-Song); Du Y (Du Yun); Peng HL (Peng Hong-Ling); Xiong YH (Xiong Yong-Hua); Niu ZC (Niu Zhi-Chuan); Wu RH (Wu Rong-Han) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 279-282 作者:  Xu YQ;  Yang XH 收藏  |  浏览/下载：76/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  QUANTUM-WELLS  ORIGIN   GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231121 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; Zhao, H; Peng, HL; Xu, YQ; Li, SY; He, ZH; Ren, ZW; Han, Q; Yang, XH; Du, Y; Wu, RH 收藏  |  浏览/下载：130/37  |  提交时间：2010/03/17 1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 11, 页码: art.no.111105 Han, Q; Yang, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, SY; Du, Y; Peng, LH; Zhao, H; Tong, CZ; Wu, RH; Wang, QM 收藏  |  浏览/下载：78/18  |  提交时间：2010/03/17 QUANTUM-WELL LASERS   Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition 期刊论文 journal of applied physics, 2000, 卷号: 87, 期号: 4, 页码: 2064-2066 作者:  Zhao DG 收藏  |  浏览/下载：53/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  GAN FILMS   Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition 期刊论文 journal of applied physics, 2000, 卷号: 88, 期号: 6, 页码: 3762-3764 作者:  Zhang SM;  Zhao DG 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  NITRIDE SEMICONDUCTORS  STRESS   Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition 期刊论文 applied physics letters, 2000, 卷号: 76, 期号: 21, 页码: 3025-3027 作者:  Zhao DG 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY  PHOTOLUMINESCENCE   Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction 期刊论文 science in china series a-mathematics physics astronomy, 1999, 卷号: 42, 期号: 5, 页码: 517-522 Xu DP; Wang YT; Yang H; Zheng LX; Li JB; Duan LH; Wu RH 收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12 cubic GaN  hexagonal  X-ray diffraction  MOCVD  SUBSTRATE NITRIDATION  OPTICAL-PROPERTIES  GAN  GAAS  GROWTH  MOLECULAR-BEAM EPITAXY