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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice 期刊论文 Infrared Physics & Technology, 2017, 卷号: 86, 页码: 159–164 作者:  Zhi Jiang;  Xi Han;  Yao-Yao Sun;  Chun-Yan Guo;  Yue-Xi Lv 收藏  |  浏览/下载：41/0  |  提交时间：2018/06/15 320 _ 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice 期刊论文 Superlattices and Microstructures, 2017, 卷号: 111, 页码: 783-788 作者:  Yaoyao Sun;  GuoweiWang;  Xi Han;  Wei Xiang;  Dongwei Jiang 收藏  |  浏览/下载：29/0  |  提交时间：2018/06/15 Digitally grown AlInAsSb for high gain separate absorption, grading,charge, and multiplication avalanche photodiodes 期刊论文 Journal of Crystal Growth, 2017, 卷号: 482, 页码: 70–74 作者:  Yuexi Lyu;  Xi Han;  Yaoyao Sun;  Zhi Jiang;  Chunyan Guo 收藏  |  浏览/下载：46/0  |  提交时间：2018/06/15 Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm 期刊论文 applied physics letters, 2016, 卷号: 108, 期号: 12, 页码: 121110 Dongwei Jiang; Wei Xiang; Fengyun Guo; Hongyue Hao; Xi Han; Xiaochao Li; Guowei Wang; Yingqiang Xu; Qingjiang Yu; Zhichuan Niu 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文 journal of crystal growth, 2016, 卷号: 443, 页码: 85-89 Wei Xiang; Guowei Wang; Hongyue Hao; Yongping Liao; Xi Han; Lichun Zhang; Yingqiang Xu; Zhengwei Ren; Haiqiao Ni; Zhenhong He; Zhichuan Niu 收藏  |  浏览/下载：36/0  |  提交时间：2017/03/16