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CORC

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Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 6, 页码: art. no. 063004
Sun L; Zhou WZ; Yu GL; Shang LY; Gao KH; Zhou YM; Lin T; Cui LJ; Zeng YP; Chu JH
收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08
Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well 期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 8, 页码: 5232-5236
Shang, LY; Lin, T; Zhou, WZ; Li, DL; Gao, HL; Zeng, YP; Guo, SL; Yu, GL; Chu, JH
收藏  |  浏览/下载：86/0  |  提交时间：2010/03/08
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：18/0  |  提交时间：2010/03/08
Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands 期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 6, 页码: 3818-3822
Shang, LY; Lin, T; Zhou, WZ; Guo, SL; Li, DL; Gao, HL; Cui, LJ; Zeng, YP; Chu, JH
收藏  |  浏览/下载：84/20  |  提交时间：2010/03/08
Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires 期刊论文
physical review b, 2004, 卷号: 69, 期号: 7, 页码: art.no.075304
Song, YP; Zhang, HZ; Lin, C; Zhu, YW; Li, GH; Yang, FH; Yu, DP
收藏  |  浏览/下载：85/25  |  提交时间：2010/03/09
Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov-de Haas measurements 期刊论文
applied physics letters, 2002, 卷号: 80, 期号: 17, 页码: 3132-3134
Cui LJ; Zeng YP; Wang BQ; Zhu ZP; Lin LY; Jiang CP; Guo SL; Chu JH
收藏  |  浏览/下载：86/27  |  提交时间：2010/08/12
Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates 期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 2429-2432
Cui LJ; Zeng YP; Wang BQ; Wu J; Zhu ZP; Lin LY
收藏  |  浏览/下载：70/6  |  提交时间：2010/08/12
HEMTS  
Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices 期刊论文
physica e-low-dimensional systems & nanostructures, 2001, 卷号: 11, 期号: 4, 页码: 384-390
Zhuang QD; Yoon SF; Li HX; Li JM; Zeng YP; Kong MY; Lin LY
收藏  |  浏览/下载：93/7  |  提交时间：2010/08/12
Increasing the photoluminescence intensity of Ge islands by chemical etching 期刊论文
chinese physics, 2001, 卷号: 10, 期号: 10, 页码: 966-969
Gao F; Huang CJ; Huang DD; Li JP; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：108/9  |  提交时间：2010/08/12
Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice 期刊论文
international journal of modern physics b, 2001, 卷号: 15, 期号: 13, 页码: 1959-1968
Liu B; Zhuang QD; Yoon SF; Dai JH; Kong MY; Zeng YP; Li JM; Lin LY; Zhang HJ
收藏  |  浏览/下载：133/25  |  提交时间：2010/08/12

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