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Pressure behavior of deep centers in ZnSxTe1-x alloys 会议论文
8th international conference on high pressure semiconductor physics (hpsp-viii), thessaloniki, greece, aug 09-13, 1998
Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/15
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
semiconductor lasers iii, beijing, peoples r china, sep 16-18, 1998
Ma XY; Cao Q; Wang ST; Guo L; Wang ZM; Wang LM; He GP; Yang YL; Zhang HQ; Zhou XN; Chen LH
收藏  |  浏览/下载:13/0  |  提交时间:2010/10/29


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