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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体物理    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：113/32  |  提交时间：2010/03/29 quantum dots  photoluminescence  combination layer  1.3 MU-M  LASERS  INALAS   Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Gong, M (Gong, Meng); Fang, ZD (Fang, Zhidan); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：118/36  |  提交时间：2010/03/29 surface morphology evolution  InAs nanostructures  island-pit pairs  MOLECULAR-BEAM EPITAXY  QUANTUM DOTS  COOPERATIVE NUCLEATION  HETEROEPITAXY  TRANSITION  ISLANDS  GROWTH   Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：82/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE 会议论文 international conference on superlattices nano-structures and nano-devices (icsnn-02), toulouse, france, jul 22-26, 2002 Lan Q; Niu ZC; Zhou DY; Kong YC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：26/0  |  提交时间：2010/11/15 Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Niu ZC; Wang XD; Miao ZH; Feng SL 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 crystal morphology  quantum dots  molecular beam epitaxy  semiconducting gallium arsenide  semiconducting indium gallium arsenide  1.35 MU-M  GAAS-SURFACES  PHOTOLUMINESCENCE  ISLANDS   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN