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1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载:224/60  |  提交时间:2010/03/29
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文
international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002
作者:  Jiang DS
收藏  |  浏览/下载:18/2  |  提交时间:2010/10/29
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Jiang DS
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice 会议论文
5th international conference on the electrical transport and optical properties of inhomogeneous media (etopim5), hong kong, hong kong, jun 21-25, 1999
作者:  Jiang DS
收藏  |  浏览/下载:16/0  |  提交时间:2010/11/15


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