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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li 收藏  |  浏览/下载：22/0  |  提交时间：2014/04/09 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong 收藏  |  浏览/下载：21/0  |  提交时间：2013/10/08 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文 ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761 Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong 收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27 Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文 zhang, yanhua1 ; ma, wenquan1 ; wei, yang1 ; cao, yulian1 ; huang, jianliang1 ; cui, kai1 ; guo, xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511 Zhang, Yanhua; Ma, Wenquan; Wei, Yang; Cao, Yulian; Huang, Jianliang; Cui, Kai; Guo, Xiaolu 收藏  |  浏览/下载：14/0  |  提交时间：2013/04/19