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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Large area flexible polymer solar cells with high efficiency enabled by imprinted Ag grid and modified buffer layer 期刊论文 Acta Materialia, 2017, 卷号: 130, 页码: 208-214 作者:  Shudi Lu;  Jie Lin;  Kong Liu;  Shizhong Yue;  Kuankuan Ren 收藏  |  浏览/下载：21/0  |  提交时间：2018/06/15 Organic-inorganic perovskite plasmonic nanowire lasers with a low threshold and a good thermal stability 期刊论文 nanoscale, 2016, 卷号: 8, 期号: 47, 页码: 19536–19540 Haichao Yu; Kuankuan Ren; Qiang Wu; Jian Wang; Jie Lin; Zhijie Wang; Jingjun Xu; Rupert F. Oulton; Shengchun Qu; Peng Jin 收藏  |  浏览/下载：28/0  |  提交时间：2017/03/10 Polarization dependence of the light coupling to surface plasmons in an Ag nanoparticle & Ag nanowire system 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 11, 页码: 117302 Yang Chao-Jie; Zhao Hua-Bo; Wang Pei-Pei; Li Jie; Tang Peng; Qu Sheng-Chun; Lin Feng; Zhu Xing 收藏  |  浏览/下载：21/0  |  提交时间：2015/03/20 Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102 Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo 收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18 Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102 Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo 收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17 Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells 期刊论文 chinese physics b, 2013, 卷号: 22, 期号: 7, 页码: 7305 Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo 收藏  |  浏览/下载：15/0  |  提交时间：2014/03/18 A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104 Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02 A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文 chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 16741056 Lü, Yuan-Jie; Lin, Zhao-Jun; Yu, Ying-Xia; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Wang, Zhan-Guo 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07