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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Numerical simulation of two-dimensional electron gas characteristics of a novel (InxAl1-xN/AlN)MQWs/GaN high electron mobility transistor 期刊论文 journal of alloys and compounds, 2014, 卷号: 605, 页码: 113-117 Li, W; Wang, XL; Qu, SQ; Wang, Q; Xiao, HL; Wang, CM; Peng, EC; Hou, X; Wang, ZG 收藏  |  浏览/下载：16/0  |  提交时间：2015/03/25 Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文 journal of applied physics, 2014, 卷号: 116, 期号: 5, 页码: 054502 Yan, JD; Wang, XL; Wang, Q; Qu, SQ; Xiao, HL; Peng, EC; Kang, H; Wang, CM; Feng, C; Yin, HB; Jiang, LJ; Li, BQ; Wang, ZG; Hou, X 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文 european physical journal-applied physics, 2014, 卷号: 66, 期号: 2, 页码: 20101 Qu, SQ; Wang, XL; Xiao, HL; Hou, X; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Peng, EC; Kang, H; Wang, ZG 收藏  |  浏览/下载：17/0  |  提交时间：2015/04/02 Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文 european physical journal-applied physics, 2014, 卷号: 68, 期号: 1, 页码: 10105 Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/20 The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文 european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102 Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ 收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06 ALGAN/GAN/INGAN/GAN DH-HEMTS  FIELD-EFFECT TRANSISTORS  ALGAN/GAN  POLARIZATION  PASSIVATION  HFETS  GHZ   The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 作者:  Bi Y;  Lin DF;  Peng EC 收藏  |  浏览/下载：19/0  |  提交时间：2011/09/14 2-DIMENSIONAL ELECTRON-GAS  ALGAN/GAN/INGAN/GAN DH-HEMTS  MILLIMETER-WAVE APPLICATIONS  FIELD-EFFECT TRANSISTORS  HETEROJUNCTION FETS  HETEROSTRUCTURES  PASSIVATION  CONFINEMENT  PERFORMANCE  BARRIERS