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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文 semiconductor science and technology, 2016, 卷号: 31, 期号: 12, 页码: 125003 Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10 Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文 phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161 He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29 A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor 期刊论文 chin. phys. lett., 2015, 卷号: 32, 期号: 5, 页码: 58501-58504 Lei Cui; Quan Wang; XiaoLiang Wang; HongLing Xiao; CuiMei Wang; LiJuan Jiang; Chun Feng; HaiBo Yin; JiaMin Gong; BaiQuan Li; ZhanGuo Wang 收藏  |  浏览/下载：28/0  |  提交时间：2016/03/29 Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文 journal of crystal growth, 2013, 卷号: 383, 页码: 25–29 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang 收藏  |  浏览/下载：14/0  |  提交时间：2014/03/18 High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文 the european physical journal applied physics, 2013, 卷号: 61, 期号: 1, 页码: 10101 Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun 收藏  |  浏览/下载：25/0  |  提交时间：2014/03/18 Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文 journal of alloys and compounds, 2013, 卷号: 576, 页码: 48–53 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang 收藏  |  浏览/下载：20/0  |  提交时间：2014/03/18 Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors 期刊论文 journal of semiconductors, 2013, 卷号: 34, 期号: 10, 页码: 104002 Xiaojia, Wan; Xiaoliang, Wang; Hongling, Xiao; Chun, Feng; Lijuan, Jiang; Shenqi, Qu; Zhanguo, Wang; Xun, Hou 收藏  |  浏览/下载：18/0  |  提交时间：2014/05/16 Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文 physica b-condensed matter, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924 Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Yin HB (Yin, Haibo); Chen H (Chen, Hong); Feng C (Feng, Chun); Jiang LJ (Jiang, Lijuan) 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/27 The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan, 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Poisson equation