QQ客服 官方微博 反馈留言

浏览/检索结果: 共17条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electron mobility of inverted InAs/GaSb quantum well structure 期刊论文 Solid State Communications, 2017, 卷号: 267, 页码: 29-32 作者:  Wenjun Huang;  Wenquan Ma;  Jianliang Huang;  Yanhua Zhang;  Yulian Cao 收藏  |  浏览/下载：26/0  |  提交时间：2018/05/23 Two-Color niBin Type II Superlattice Infrared Photodetector With External Quantum Efficiency Larger Than 100% 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 页码: 1266-1269 作者:  Jianliang Huang;  Wenquan Ma;  Yanhua Zhang;  Yulian Cao;  Wenjun Huang 收藏  |  浏览/下载：22/0  |  提交时间：2018/05/23 Pushing Detection Wavelength Toward 1 μm by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers 期刊论文 IEEE Electron Device Letters, 2016, 卷号: 37, 期号: 9, 页码: 1166 - 1169 Yanhua Zhang; Wenquan Ma; Jianliang Huang; Yulian Cao; Ke Liu; Wenjun Huang; Chengcheng Zhao; Haiming Ji; Tao Yang 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10 Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate 期刊论文 Applied Physics Letters, 2015, 卷号: 107, 期号: 4, 页码: 041103 Ke Liu; Wenquan Ma; Jianliang Huang; Yanhua Zhang; Yulian Cao; Wenjun Huang; Shuai Luo; Tao Yang 收藏  |  浏览/下载：28/0  |  提交时间：2016/03/23 Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal 期刊论文 solid state communications, 2015, 卷号: 224, 页码: 34-36 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shuai Luo; Haiming Ji; Tao Yang 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/23 Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector 期刊论文 applied physics letters, 2015, 卷号: 106, 期号: 26, 页码: 1-5 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shulong Lu 收藏  |  浏览/下载：31/0  |  提交时间：2016/03/23 Narrow-band Type II Superlattice Photodetector with Detection Wavelength Shorter than 2 um 期刊论文 ieee photonics technology letters, 2015, 卷号: 27, 期号: 21, 页码: 2276-2279 Jianliang Huang; Wenquan Ma; Yanhua Zhang; Yulian Cao; Ke Liu; Wenjun Huang; Shulong Lu 收藏  |  浏览/下载：17/0  |  提交时间：2016/03/23 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li 收藏  |  浏览/下载：22/0  |  提交时间：2014/04/09 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong 收藏  |  浏览/下载：21/0  |  提交时间：2013/10/08 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文 ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761 Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong 收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27