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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Mid-wavelength type II InAs/GaSb superlattice infrared focal plane arrays 期刊论文 infrared physics and technology, 2016, 卷号: 78, 页码: 263-267 Xuchang Zhou; Dongsheng Li; Jianliang Huang; Yanhua Zhang; Yingchun Mu; Wenquan Ma; Xiaoying Tie; Dafan Zuo 收藏  |  浏览/下载：20/0  |  提交时间：2017/03/10 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Xiaolu Guo, Wenquan Ma, Jianliang Huang, Yanhua Zhang, Yang Wei, Kai Cui, Yulian Cao and Qiong Li 收藏  |  浏览/下载：22/0  |  提交时间：2014/04/09 Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2013, 卷号: 28, 期号: 4, 页码: 045004 Guo, Xiaolu; Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao, Yulian; Li, Qiong 收藏  |  浏览/下载：21/0  |  提交时间：2013/10/08 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文 ieee electron device letters, 2013, 卷号: 34, 期号: 6, 页码: 759-761 Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong 收藏  |  浏览/下载：19/0  |  提交时间：2013/08/27 Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode 期刊论文 applied optics, 2007, 卷号: 46, 期号: 28, 页码: 7035-7039 Yang Z (Yang Zhi); Chang B (Chang Benkang); Zou J (Zou Jijun); Qiao J (Qiao Jianliang); Gao P (Gao Pin); Zeng Y (Zeng Yiping); Li H (Li Hui) 收藏  |  浏览/下载：50/0  |  提交时间：2010/03/29 ACTIVATED GAAS