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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Kinetic Monte Carlo simulation of semiconductor quantum dot growth 会议论文 china international conference on nanoscience and technology (chinanano 2005), beijing, peoples r china, jun 09-11, 2005 Zhao C; Chen YH; Sun J; Lei W; Cui CX; Yu LK; Li K; Wang ZG 收藏  |  浏览/下载：269/88  |  提交时间：2010/03/29 Monte Carlo simulation   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：100/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 作者:  Xu B 收藏  |  浏览/下载：134/15  |  提交时间：2010/03/29 Monte Carlo simulation   Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 作者:  Ye XL;  Jin P;  Xu B 收藏  |  浏览/下载：119/42  |  提交时间：2010/03/29 lateral intersubband photocurrent   Mechanism on exciton-mediated energy transfer in erbium-doped silicon 会议论文 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Lei HB; Yang QQ; Ou HY; Wang QM 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15 Er-doped silicon  photoluminescence  energy transfer  AL2O3 WAVE-GUIDES  ER  ELECTROLUMINESCENCE  EPITAXY  GAAS   The fabrication of thick SiO2 layer by anodization 会议论文 international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999 Ou HY; Yang QQ; Lei HB; Wang QM; Hu XW 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 thick SiO2 layer  porous silicon  SiO2/Si waveguide device  WAVE-GUIDES  SILICON   Preparation and characterization of erbium doped sol-gel silica glasses 会议论文 conference on rare-earth-doped materials and devices iii, san jose, ca, jan 27-28, 1999 Lei HB; Yang QQ; Ou HY; Chen BW; Yu JZ; Wang QM; Xie DT; Wu JG; Xu DF; Xu GX 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 Er-doped silica glass  sol-gel process  photoluminescence  PLANAR WAVE-GUIDES  MOLECULAR-BEAM EPITAXY  CRYSTAL SILICON  IMPLANTED SI  LUMINESCENCE  ELECTROLUMINESCENCE  FABRICATION  IMPURITIES  FILMS  IONS