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| The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
作者: Gaoqiang Deng; Yuantao Zhang; Zhen Huang; Long Yan; Pengchong Li
  收藏 | 浏览/下载：17/0 | 提交时间：2018/11/30 |
| The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer 期刊论文
J Mater Sci: Mater Electron, 2017, 卷号: 28, 页码: 6008–6014
作者: Shuang Cui; Yuantao Zhang; Zhen Huang; Gaoqiang Deng; Baozhu Li
收藏 | 浏览/下载：10/0 | 提交时间：2018/11/30 |
| Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文
superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：29/0 | 提交时间：2017/03/10 |
| Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution 期刊论文
applied surface science, 2016, 卷号: 360, 页码: 772-776
Junyan Jiang; Yuantao Zhang; Chen Chi; Fan Yang; Pengchong Li; Degang Zhao; Baolin Zhang; Guotong Du
收藏 | 浏览/下载：12/0 | 提交时间：2017/03/10 |
| Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes 期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145104
Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du
收藏 | 浏览/下载：22/0 | 提交时间：2017/03/10 |
| Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition 期刊论文
vacuum, 2015, 卷号: 119, 期号: 2015, 页码: 63e67
Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du
收藏 | 浏览/下载：13/0 | 提交时间：2016/03/23 |
