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| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192
X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
  收藏 | 浏览/下载：26/0 | 提交时间：2017/03/10 |
| Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
chemical physics letters, 2016, 卷号: 651, 页码: 76-79
F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：20/0 | 提交时间：2017/03/10 |
| Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
journal of alloys and compounds, 2016, 卷号: 681, 页码: 522-526
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; J.P. Liu; L.Q. Zhang; H. Yang; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：12/0 | 提交时间：2017/03/10 |
| Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
journal of alloys and compounds, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; H. Yang; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：13/0 | 提交时间：2016/03/23 |
| The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文
superlattices and microstructures, 2015, 卷号: 88, 页码: 50-55
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; X. Li; F. Liang; J.P. Liu; S.M. Zhang; H. Yang; Y.T. Zhang; G.T. Du
收藏 | 浏览/下载：20/0 | 提交时间：2016/03/23 |
