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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文 CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4 作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan 收藏  |  浏览/下载：39/0  |  提交时间：2018/05/14 Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp   Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers 期刊论文 Nanoscale Research Letters, 2018, 卷号: 13, 页码: 59 作者:  Xiang-Bin Su ;   Ying Ding ;   Ben Ma ;   Ke-Lu Zhang ;   Ze-Sheng Chen ;   Jing-Lun Li ;   Xiao-Ran Cui ;  Ying-Qiang Xu ;   Hai-Qiao Ni ;   Zhi-Chuan Niu 收藏  |  浏览/下载：38/0  |  提交时间：2019/11/18 Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process 会议论文 作者:  Jia, Qing-Xuan;  Guo, Chun-Yan;  Sun, Yao-Yao;  Yang, Cheng-Ao;  Lv, Yue-Xi 收藏  |  浏览/下载：10/0  |  提交时间：2019/11/26 Anti-reflection  Broadband anti reflections  Broadband AR coatings  Inas/gasb type-ii superlattices  Infrared photodetector  Lift-off process  Lift-off technology  Plasma enhanced chemical vapor depositions (PE CVD)   Broadband antireflection coating for the near-infrared InAs/GaSb Type-II superlattices photodetectors by lift-off process 会议论文 Beijing, China, 2018-10-12 作者:  Jia, Qing-Xuan;  Guo, Chun-Yan;  Sun, Yao-Yao;  Yang, Cheng-Ao;  Lv, Yue-Xi 收藏  |  浏览/下载：44/0  |  提交时间：2019/03/07 Unveiling the important role of non-fullerene acceptors crystallinity on optimizing nanomorphology and charge transfer in ternary organic solar cells 期刊论文 ORGANIC ELECTRONICS, 2018, 卷号: 62, 页码: 643-652 作者:  Zhang, Kang-Ning;  Bi, Peng-Qing;  Wen, Zhen-Chuan;  Niu, Meng-Si;  Chen, Zhi-Hao 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 Organic solar cells  Charge transfer  Non-fullerene acceptors   Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-mu m Quantum Dot Lasers 期刊论文 NANOSCALE RESEARCH LETTERS, 2018, 卷号: 13 作者:  Su, Xiang-Bin;  Ding, Ying;  Ma, Ben;  Zhang, Ke-Lu;  Chen, Ze-Sheng 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/30 Quantum dot (QD)  Annealing  Bimodal size  Molecular beam epitaxy (MBE)  Laser   High Order Laterally-Coupled Distributed-Feedback GaSb-Based Diode Lasers at 1.9 mu m Wavelength 会议论文 ADVANCED FUNCTIONAL MATERIALS (CMC 2017), 2018-01-01 作者:  Li, Huan;  Xie, Sheng-wen;  Zhang, Yu;  Huang, Shu-Shan;  Wang, Jin-Liang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Distributed feedback lasers  Laterally-corrugated ridge waveguide  Higher-order grating  Ultraviolet exposure lithographic