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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2018    专题：西安交通大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers 期刊论文 Microsystem Technologies, 2018 作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Mei, Qiang 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/19 Analytical results  Experimental extraction  Gaussian profiles  Non-uniform doping  Radiation-hardened  Silicon on insulator wafers  Subthreshold swing  Technology computer aided design   Passive Noise Shaping in SAR ADC With Improved Efficiency 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2018, 卷号: 26, 页码: 416-420 作者:  Song, Yan;  Chan, Chi-Hang;  Zhu, Yan;  Geng, Li;  Seng-Pan, U. 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/26 successive approximation register (SAR)  passive noise shaping (PNS)  delta sampling  oversampling  Analog-to-digital converter (ADC)   Catalytic oxidation of 1,2-dichloroethane over three-dimensional ordered meso-macroporous Co3O4/La0.7Sr0.3Fe0.5Co0.5O3: Destruction route and mechanism 期刊论文 APPLIED CATALYSIS A-GENERAL, 2018, 卷号: 553, 页码: 1-14 作者:  Tian, Mingjiao;  He, Chi;  Yu, Yanke;  Pan, Hua;  Smith, Louise 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 1,2-dichloroethane  Reaction intermediates  Catalytic oxidaiton  3DOM perovskite oxide  Destruction mechanism  Co3O4   Template-free synthesis of hierarchical porous carbon with controlled morphology for CO2 efficient capture 期刊论文 CHEMICAL ENGINEERING JOURNAL, 2018, 卷号: 353, 页码: 584-594 作者:  Chen, Changwei;  Huang, Huang;  Yu, Yanke;  Shi, Jianwen;  He, Chi 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26 Recyclability  Hierarchical porous carbons  Microporosity  CO2/N-2 selectivity  CO2 capture   Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile 期刊论文 IEEE Transactions on Nuclear Science, 2018, 卷号: 65, 页码: 2679-2690 作者:  Huang, Huixiang;  Wei, Sufen;  Pan, Jinyan;  Xu, Wenbin;  Chen, Chi-Cheng 收藏  |  浏览/下载：6/0  |  提交时间：2019/11/26 Gaussians  Integrated circuit modeling  Interface traps  MOS-FET  Short-channel effect  Silicon on insulator (SOI)  Threshold voltage modeling  Total dose radiation