CORC

浏览/检索结果: 共14条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin -Film Transistors 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 页码: 10798-10804
作者:  Abliz, Ablat;  Gao, Qingguo;  Wan, Da;  Liu, Xingqiang;  Xu, Lei
收藏  |  浏览/下载:4/0  |  提交时间:2019/11/21
Self-Healing Performance of Coatings Containing Synthetic Hexamethylene Diisocyanate Biuret Microcapsules 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2017, 卷号: 164, 期号: 12, 页码: C635-C640
作者:  Wang, Wei;  Li, Weihua;  Song, Liying;  Fan, Weijie;  Xiong, Chuansheng
收藏  |  浏览/下载:18/0  |  提交时间:2018/01/16
Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin -Film Transistors 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 期号: 12
作者:  Abliz, Ablat;  Gao, Qingguo;  Wan, Da;  Liu, Xingqiang;  Xu, Lei
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/05
RBS Depth Profiling Analysis of (Ti, Al)N/MoN and CrN/MoN Multilayers 期刊论文
Nanoscale Research Letters, 2017, 卷号: 12, 期号: 1
作者:  Han, Bin;  Wang, Zesong;  Devi, Neena;  Kondamareddy, K.K.;  Wang, Zhenguo
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/05
Gene essentiality prediction based on fractal features and machine learning 期刊论文
MOLECULAR BIOSYSTEMS, 2017, 卷号: 13, 期号: 3, 页码: 577-584
作者:  Yu, Yongming;  Yang, Licai;  Liu, Zhiping;  Zhu, Chuansheng
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/11
Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors 期刊论文
ACS Applied Materials and Interfaces, 2017, 卷号: 9, 期号: 12
作者:  Li, Xuefei;  Chen, Huipeng;  Xu, Lei;  Liu, Xingqiang;  Wan, Da
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/05
RBS Depth Profiling Analysis of (Ti, Al) N/MoN and CrN/MoN Multilayers 期刊论文
NANOSCALE RESEARCH LETTERS, 2017, 卷号: 12
作者:  Han, Bin;  Wang, Zesong;  Devi, Neena;  Kondamareddy, K. K.;  Wang, Zhenguo
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05
Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 8
作者:  Wang, Jingli;  Zou, Xuming;  Zhang, Kai;  Guo, Yaxiong;  Li, Yi
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 8
作者:  Li, Yi;  Guo, Yaxiong;  Zhang, Kai;  Zou, Xuming;  Wang, Jingli
收藏  |  浏览/下载:4/0  |  提交时间:2019/12/05
Positive Shift in Threshold Voltage Induced by CuO and NiOxGate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 8
作者:  Li, Yi;  Guo, Yaxiong;  Zhang, Kai;  Zou, Xuming;  Wang, Jingli
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05


©版权所有 ©2017 CSpace - Powered by CSpace