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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2017    专题：上海大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Atomic layer deposition deposited high dielectric constant (K) ZrA10(x) gate insulator enabling high performance ZnSnO thin film transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 109, 页码: 852-859 作者:  Huang, Chuan-Xin[1];  Li, Jun[2];  Zhong, De-Yao[3];  Zhao, Cheng-Yu[4];  Zhu, Wen-Qing[5] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/24 Atomic layer deposition  ZrA10(x) gate insulator  ZTO TFTs  PBS stability   Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4959-4964 作者:  Li, Jun[1];  Huang, Chuan-Xin[2];  Zhao, Cheng-Yu[3];  Zhong, De-Yao[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 AlZrOx insulator  atomic layer deposition  stability  thin-film transistors (TFTs)   A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs 期刊论文 MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 221-227 作者:  Huang, Chuan-Xin[1];  Li, Jun[2];  Zhu, Wen-Qing[3];  Zhang, Jian-Hua[4];  Jiang, Xue-Yin[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 ALD Al2O3  DOSs  oxide semiconductor  transistor   Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite 期刊论文 RSC ADVANCES, 2017, 卷号: 7, 页码: 52517-52523 作者:  Li, Jun[1];  Huang, Chuan-Xin[2];  Zhang, Jian-Hua[3] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/24 TiSiOx gate dielectrics produced by reactive sputtering for high performance InGaZnO thin film transistors 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 61, 页码: 125-130 作者:  Fu, Yi-Zhou[1];  Li, Jun[2];  Zhao, Cheng-Yu[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：8/0  |  提交时间：2019/04/24 Oxygen partial pressure  TiSiOx gate insulator  InGaZnO-TFTs  Density of states   Realization of solution-processed semiconducting single-walled carbon nanotubes thin film transistors with atomic layer deposited ZrAlOx gate insulator 期刊论文 APPLIED PHYSICS LETTERS, 2017, 卷号: 110 作者:  Huang, Chuan-Xin[1];  Li, Jun[2];  Zhong, De-Yao[3];  Zhao, Cheng-Yu[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/24 Mg Doping to Simultaneously Improve the Electrical Performance and Stability of MgInO Thin-Film Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 2216-2220 作者:  Zhao, Cheng-Yu[1];  Li, Jun[2];  Zhong, De-Yao[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24 Magnesium-doped indium oxide (MgInO)  thin-film transistors (TFTs)  Mg doping concentration  solution process  stability