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| GaN high electron mobility transistors with AlInN back barriers 期刊论文 journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19 X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10 |
| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文 superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192 X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:27/0  |  提交时间:2017/03/10 |
| Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文 chemical physics letters, 2016, 卷号: 651, 页码: 76-79 F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2017/03/10 |
| Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文 vacuum, 2016, 卷号: 129, 页码: 99-104 J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; L.C. Le; X.G. He; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2017/03/10 |
| Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文 journal of alloys and compounds, 2016, 卷号: 681, 页码: 522-526 J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu; Z.S. Liu; J.P. Liu; L.Q. Zhang; H. Yang; Y.T. Zhang; G.T. Du
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:12/0  |  提交时间:2017/03/10 |