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INVESTIGATION OF THE FORMING PROGRAM FAILTURE IN ITIR STRUCTURE 会议论文
作者:  Liu M(刘明);  Long SB(龙世兵);  Wang GM(王国明);  Zhang MY(张美芸);  Liu HT(刘红涛)
收藏  |  浏览/下载:27/0  |  提交时间:2016/06/14
A Physical Model for the Statistics of the Set Switching Time of Resistive RAM Measured with the Width-Adjusting Pulse Operation Method 期刊论文
IEEE Electron Device Letters, 2015
作者:  Zhang MY(张美芸);  Yu ZA(余兆安);  Li Y(李阳);  Xu DL(许定林);  Lv HB(吕杭炳)
收藏  |  浏览/下载:17/0  |  提交时间:2016/05/24
Justification and Monte Carlo simulation of microstructure evolution process of conductive filament in reset transition in Cu/HfO2/Pt RRAM 会议论文
作者:  Liu Q(刘琦);  Xu XX(许晓欣);  Zhang MY(张美芸);  Wang GM(王国明);  Liu M(刘明)
收藏  |  浏览/下载:10/0  |  提交时间:2016/06/14
Improving the Resistive Switching Reliability via controlling the resistance states of RRAM 会议论文
作者:  Liu M(刘明);  Liu Q(刘琦);  Lv HB(吕杭炳);  Xu DL(许定林);  Xu XX(许晓欣)
收藏  |  浏览/下载:9/0  |  提交时间:2016/06/14
Methodology for stability evaluation on the multi-level storages of oxide-based conductive bridge RAM (CBRAM) 会议论文
作者:  Zhang MY(张美芸);  Lv HB(吕杭炳);  Liu M(刘明);  Liu HT(刘红涛);  Xu XX(许晓欣)
收藏  |  浏览/下载:7/0  |  提交时间:2016/06/14
Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation 期刊论文
Appl. Phys. Lett., 2015
作者:  Xu DL(许定林);  Wang GM(王国明);  Long SB(龙世兵);  Yu ZA(余兆安);  Zhang MY(张美芸)
收藏  |  浏览/下载:14/0  |  提交时间:2016/05/24
Investigation of LRS dependence on the retention of HRS in CBRAM 期刊论文
Nanoscale Research Letters, 2015
作者:  Lv HB(吕杭炳);  Xu XX(许晓欣);  Liu HT(刘红涛);  Luo Q(罗庆);  Gong TC(龚天成)
收藏  |  浏览/下载:8/0  |  提交时间:2016/05/24
Impact of program/erase operation on the performances of oxide-based resistive switching memory 期刊论文
Nanoscale Research Letters, 2015
作者:  Wang GM(王国明);  Long SB(龙世兵);  Yu ZA(余兆安);  Zhang MY(张美芸);  Li Y(李阳)
收藏  |  浏览/下载:9/0  |  提交时间:2016/05/24


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