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浏览/检索结果: 共2条，第1-2条 帮助 限定条件 发表日期：2014     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hydrogen induced redox mechanism in amorphous carbon resistive random access memory 期刊论文 nanoscale research letters, 2014 Chen, Yi-Jiun; Chen, Hsin-Lu; Young, Tai-Fa; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Zhang, Rui; Chen, Kai-Huang; Lou, Jen-Chung; Chu, Tian-Jian; Chen, Jung-Hui; Bao, Ding-Hua; Sze, Simon M. 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Carbon  Hydrogen redox  Conjugation double bond  RRAM  CO2 FLUID TREATMENT  RRAM DEVICES  HOPPING CONDUCTION  SILICON  TRANSITION  ORIGIN  FILMS   Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor 期刊论文 ieee electron device letters, 2014 Chen, Yi-Jiun; Chang, Kuan-Chang; Chang, Ting-Chang; Chen, Hsin-Lu; Young, Tai-Fa; Tsai, Tsung-Ming; Zhang, Rui; Chu, Tian-Jian; Ciou, Jian-Fa; Lou, Jen-Chung; Chen, Kai-Huang; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/11 DLC  HfO2  hydrogen  oxygen  RRAM  RANDOM-ACCESS MEMORY  MECHANISM  DEVICES  MODEL  RRAM