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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2014     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Comparison for the carrier mobility between the Ⅲ-Ⅴ nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 半导体学报（英文版）, 2014, 期号: 9, 页码: 65-70 作者:  Luan Chongbiao;  Lin Zhaojun;  Lü Yuanjie;  Feng Zhihong;  Zhao Jingtao 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Ⅲ-Ⅴ nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering  2DEG electron mobility   The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 半导体学报（英文版）, 2014, 卷号: 35, 期号: 12 作者:  Yu, Yingxia;  Lin, Zhaojun;  , Yuanjie;  Feng, Zhihong;  Luan, Chongbiao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 AlN/GaN heterostructure field-effect transistors  channel electric field distribution  polarization Coulomb field scattering  electron mobility   Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Journal of Applied Physics, 2014, 期号: 4, 页码: 044507-1-044507-7 作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Jingtao Zhao;  Yutang Wang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Physica, E. Low-dimensional systems & nanostructures, 2014, 页码: 76-79 作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Zhihong Feng;  Jingtao Zhao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN HFETs   Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4 作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Zhao, Jingtao;  Wang, Yutang 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field-effect transistors 期刊论文 Journal of Semiconductors, 2014, 卷号: 35, 期号: 9 作者:  Luan, Chongbiao;  Lin, Zhaojun;  , Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 2DEG electron mobility  III-V nitride and AlGaAs/GaAs HFETs  polarization Coulomb field scattering   Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 卷号: 62, 页码: 76-79 作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN  HFETs   Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes 期刊论文 APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 8 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Zhou, Yang;  Yang, Ming 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17