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A novel porous substrate for the growth of high quality GaN crystals by HVPE 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 66, 页码: 35106-35111
作者:  Dai, YB;  Wu, YZ;  Zhang, L;  Shao, YL;  Tian, Y
收藏  |  浏览/下载:21/0  |  提交时间:2016/04/08
Influence of V/III ratio on stress control in GaN grown on different templates by hydride vapour phase epitaxy 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 41, 页码: 21504-21509
作者:  Dai, YB;  Shao, YL;  Wu, YZ;  Hao, XP;  Zhang, P
收藏  |  浏览/下载:13/0  |  提交时间:2016/04/08


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