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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2014    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文 chinese physics letters, 2014, 卷号: 31, 期号: 6, 页码: 068502 Kang, H; Wang, Q; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Wang, XL; Wang, ZG; Hou, X 收藏  |  浏览/下载：16/0  |  提交时间：2015/03/25 Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 5, 页码: 053106 Gao, HS; Liu, Y; Zhang, HY; Wu, SJ; Jiang, CY; Yu, JL; Zhu, LP; Li, Y; Huang, W; Chen, YH 收藏  |  浏览/下载：30/0  |  提交时间：2015/03/19 Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 11, 页码: 117803 Wang Wei-Ying; Liu Gui-Peng; Jin Peng; Mao De-Feng; Li Wei; Wang Zhan-Guo; Tian Wu; Chen Chang-Qing 收藏  |  浏览/下载：23/0  |  提交时间：2015/03/20 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507 Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/19 Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文 scientific reports, 2014, 卷号: 4, 页码: 6521 Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B 收藏  |  浏览/下载：21/0  |  提交时间：2015/03/20 Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文 european physical journal-applied physics, 2014, 卷号: 66, 期号: 2, 页码: 20101 Qu, SQ; Wang, XL; Xiao, HL; Hou, X; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Peng, EC; Kang, H; Wang, ZG 收藏  |  浏览/下载：17/0  |  提交时间：2015/04/02 Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文 european physical journal-applied physics, 2014, 卷号: 68, 期号: 1, 页码: 10105 Qu, SQ; Wang, XL; Xiao, HL; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Yan, JD; Peng, EC; Kang, H; Wang, ZG; Hou, X 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/20