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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2012    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Distribution of electric field and design of devices in GaN avalanche photodiodes 期刊论文 science china-physics mechanics & astronomy, 2012, 卷号: 55, 期号: 4, 页码: 619-624 Wu, LL; Zhao, DG; Deng, Y; Jiang, DS; Zhu, JJ; Wang, H; Liu, ZS; Zhang, SM; Zhang, BS; Yang, H 收藏  |  浏览/下载：14/0  |  提交时间：2013/03/17 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H 收藏  |  浏览/下载：16/0  |  提交时间：2013/04/19 Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire 期刊论文 journal of alloys and compounds, 2012, 卷号: 544, 页码: 94-98 Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/07 Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.) 收藏  |  浏览/下载：7/0  |  提交时间：2013/04/02 Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文 journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48 Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui) 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/27 Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文 journal of crystal growth, 2012, 卷号: 348, 期号: 1, 页码: 25-30 Zhu, JJ; Fan, YM; Zhang, H; Lu, GJ; Wang, H; Zhao, DG; Jiang, DS; Liu, ZS; Zhang, SM; Chen, GF; Zhang, BS; Yang, H 收藏  |  浏览/下载：17/0  |  提交时间：2013/02/27 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.); Li L (Li, L.); Wu LL (Wu, L. L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Li ZC (Li, Z. C.); Fan YM (Fan, Y. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.) 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20 Positive and negative effects of oxygen in thermal annealing of p-type GaN 期刊论文 semiconductor science and technology, 2012, 卷号: 27, 期号: 8, 页码: 85017 Wu, LL; Zhao, DG; Jiang, DS; Chen, P; Le, LC; Li, L; Liu, ZS; Zhang, SM; Zhu, JJ; Wang, H; Zhang, BS; Yang, H 收藏  |  浏览/下载：11/0  |  提交时间：2013/03/17 24-GHz directly modulated DFB laser modules for analog applications 期刊论文 ieee photonics technology letters, 2012, 卷号: 24, 期号: 5, 页码: 407-409 Xie, Liang; Man, Jiang Wei; Wang, Bao Jun; Liu, Yu; Wang, Xin; Yuan, Hai Qing; Zhao, Ling Juan; Zhu, Hong Liang; Zhu, Ning Hua; Wang, Wei 收藏  |  浏览/下载：15/0  |  提交时间：2013/04/19 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H 收藏  |  浏览/下载：21/0  |  提交时间：2013/04/19