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浏览/检索结果: 共14条，第1-10条 帮助 限定条件 发表日期：2009    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 9, 页码: art. no. 094903 Li MC; Qiu YX; Liu GJ; Wang YT; Zhang BS; Zhao LC 收藏  |  浏览/下载：31/0  |  提交时间：2010/03/08 X-RAY-DIFFRACTION  MOLECULAR-BEAM-EPITAXY  FILMS  MISFIT   Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015108 作者:  Wang H;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：169/40  |  提交时间：2010/03/08 SURFACE-MORPHOLOGY  DETECTORS  GROWTH   Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文 acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420 作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG 收藏  |  浏览/下载：50/4  |  提交时间：2010/03/08 InN  dislocation  carrier origination  localization   Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文 chinese physics letters, 2009, 卷号: 26, 期号: 7, 页码: art. no. 076104 作者:  Wang LJ;  Yang H;  Jiang DS;  Zhao DG;  Zhang SM 收藏  |  浏览/下载：80/0  |  提交时间：2010/03/08 DENSITIES  CRYSTALS  LAYERS   The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 期刊论文 chinese physics b, 2009, 卷号: 18, 期号: 10, 页码: 4413-4417 Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Jiang DS (Jiang De-Sheng); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Wang H (Wang Hui); Chen GF (Chen Gui-Feng); Yang H (Yang Hui) 收藏  |  浏览/下载：130/35  |  提交时间：2010/03/08 GaN   Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410 作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ 收藏  |  浏览/下载：73/0  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  PHASE EPITAXY  QUANTUM DOTS  BAND-GAP  GROWTH  SURFACES   Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文 acta physica sinica, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957 Zhang S (Zhang Shuang); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Wang YT (Wang Yu-Tian); Duan LH (Duan Li-Hong); Liu WB (Liu Wen-Bao); Jiang DS (Jiang De-Sheng); Yang H (Yang Hui) 收藏  |  浏览/下载：138/40  |  提交时间：2010/03/08 GaN   Pipeline Architecture and Parallel Computation-Based Real-Time Stereovision Tracking System for Surgical Navigation 会议论文 26th ieee international instrumentation and measurement technology conference, singapore, singapore, 2009 Zhou P (Zhou Ping); Liu Y (Liu Yue); Wang YT (Wang Yongtian) 收藏  |  浏览/下载：309/102  |  提交时间：2010/04/26 Parallel processing   Experimental demonstration of distributed feedback semiconductor lasers based on reconstruction-equivalent-chirp technology 期刊论文 optics express, 2009, 卷号: 17, 期号: 7, 页码: 5240-5245 Li JS; Wang H; Chen XF; Yin ZW; Shi YC; Lu YQ; Dai YT; Zhu HL 收藏  |  浏览/下载：41/17  |  提交时间：2010/03/08 DFB LASERS  GRATINGS  PERFORMANCE   The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：91/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE