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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2006    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP 收藏  |  浏览/下载：223/40  |  提交时间：2010/03/29 surface morphology   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 anodic alumina films   Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ 收藏  |  浏览/下载：115/18  |  提交时间：2010/03/29 THERMALLY STIMULATED CURRENT  GALLIUM NITRIDE  DEFECTS   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films   Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 期刊论文 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 40495 Liu Z; Wang JX; Wang XL; Hu GX; Guo LC; Liu HX; Li JP; Li JM; Zeng YP 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 surface morphology  GaN/Si template  GaN  MOCVD  ALLOYS  MOVPE