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The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices 期刊论文
solid-state electronics, 2001, 卷号: 45, 期号: 5, 页码: 751-754
Cao X; Zeng YP; Kong MY; Pan L; Wang BQ; Zhu ZP
收藏  |  浏览/下载:103/6  |  提交时间:2010/08/12
Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates 期刊论文
applied physics letters, 2001, 卷号: 79, 期号: 9, 页码: 1375-1377
Jiang CP; Huang ZM; Li ZF; Yu J; Guo SL; Lu W; Chu JH; Cui LJ; Zeng YP; Zhu ZP; Wang BQ
收藏  |  浏览/下载:76/2  |  提交时间:2010/08/12
Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates 期刊论文
applied physics letters, 2001, 卷号: 79, 期号: 12, 页码: 1909-1911
Jiang CP; Huang ZM; Guo SL; Chu JH; Cui LJ; Zeng YP; Zhu ZP; Wang BQ
收藏  |  浏览/下载:125/9  |  提交时间:2010/08/12


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