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Effects of ultra-low al alloying in(al) as layer on the formation and evolution of inas/gaas quantum dots 期刊论文
Journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: 6
作者:  Zhou, X. L.;  Chen, Y. H.;  Li, T. F.;  Zhou, G. Y.;  Zhang, H. Y.
收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12
The transition from two-stage to three-stage evolution of wetting layer of inas/gaas quantum dots caused by postgrowth annealing 期刊论文
Applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: 3
作者:  Zhou, G. Y.;  Chen, Y. H.;  Yu, J. L.;  Zhou, X. L.;  Ye, X. L.
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05
Optical properties of inn rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文
Physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:  Sun, Yuanping;  Cho, Yong-Hoon;  Dai, Zhenhong;  Wang, Weitian;  Wang, Hui
收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12
The two- to three-dimensional growth transition of inas/gaas epitaxy layer studied by reflectance difference spectroscopy 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: 4
作者:  Zhou, G. Y.;  Chen, Y. H.;  Tang, C. G.;  Liang, L. Y.;  Jin, P.
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:  Zhang SM
收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05
The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05
Voltage tunable two-color inas/gaas quantum dot infrared photodetector 期刊论文
Applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: 3
作者:  Ma, W. Q.;  Yang, X. J.;  Chong, M.;  Yang, T.;  Chen, L. H.
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Xu B;  Jin P
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09
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